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Nanoporous Cu foam is widely applied in many fields such as the packaging of electronic power devices. In this study, a sandwich-structured Cu-Zn eutectic alloy precursor composed of Cu0.53Zn0.47/Cu5Zn8/Cu0.53Zn0.47 is prepared through electroplating. The surface layer of the precursor, Cu0.53Zn0.47, has a flat surface with numerous grain boundaries, which effectively promotes its dealloying behavior. By contrast, Cu5Zn8 has a porous structure, which promotes the dealloying behavior at the center of the precursor. The dealloying of Cu0.53Zn0.47 is dominated by the coherent surface diffusion of Cu atoms, and the crystal lattice and orientation show no changes before and after dealloying. By contrast, the dealloying behavior of Cu5Zn8 requires the renucleation of Cu crystals; in this process, Cu atoms are transported to the surface of the layer by capillary forces to form clusters, which nucleate and grow. [ABSTRACT FROM AUTHOR]

The mesophase pitch-based carbon fiber interface material (TIM) with a vertical array was prepared by using mesophase pitch-based short-cut fibers (MPCFs) and 3016 epoxy resin as raw materials and carbon nanotubes (CNTs) as additives through electrostatic flocking and resin pouring molding process. The microstructure and thermal properties of the interface were analyzed by using a scanning electron microscope (SEM), laser thermal conductivity and thermal infrared imaging methods. The results indicate that the plate spacing and fusing voltage have a significant impact on the orientation of the arrays formed by mesophase pitch-based carbon fibers. While the orientation of the carbon fiber array has a minimal impact on the shore hardness of TIM, it does have a direct influence on its thermal conductivity. At a flocking voltage of 20 kV and plate spacing of 12 cm, the interface material exhibited an optimal thermal conductivity of 24.47 W/(m·K), shore hardness of 42 A and carbon fiber filling rate of 6.30 wt%. By incorporating 2% carbon nanotubes (CNTs) into the epoxy matrix, the interface material achieves a thermal conductivity of 28.97 W/(m·K) at a flocking voltage of 30 kV and plate spacing of 10 cm. This represents a 52.1% increase in thermal conductivity compared to the material without TIM. The material achieves temperature uniformity within 10 s at the same heat source temperatures, which indicates a good application prospect in IC packaging and electronic heat dissipation. [ABSTRACT FROM AUTHOR]