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Tuning the third-order nonlinear properties of graphene by hybrid method is of great significance in nonlinear optics research. ZrO2/reduced graphene oxide (RGO) composites with different ZrO2 concentrations were prepared by a simple hydrothermal method. The morphology and structure show that ZrO2 nanoparticles were uniformly dispersed on the surface of graphene nanosheets. The nonlinear optical (NLO) characteristics of composites with different ZrO2 concentrations were studied by the Z-scan technique of 532 nm picosecond pulsed laser. The results showed that ZrO2/RGO composites had saturated absorption and positive nonlinear refraction characteristics. Meanwhile, the third-order nonlinear susceptibility of the ZrO2/RGO composite with a 4:1 mass ratio of ZrO2 to graphene oxide could reach 23.23 × 10−12 esu, which increased tenfold compared to RGO, and the nonlinear modulation depth reached 11.22%. Therefore, the NLO characteristics could be effectively adjusted by controlling the concentration of ZrO2, which lays a foundation for further research on the application of ZrO2/RGO composites in NLO devices. [ABSTRACT FROM AUTHOR]

The absence of magnetic moments in pristine two-dimensional (2D) semiconducting materials has attracted many research interests. Transition-metal (TM) decoration has been found to be an effective strategy to introduce magnetic moments in non-magnetic 2D semiconductors. However, the stability of TM atoms modified 2D semiconductors has not been well explored. Here, taking 2D Tin (II) sulfide (SnS) monolayer as a prototype, we explored the stability of magnetic semiconductors through this method. In our studies, all possible configurations of TM decoration have been considered, namely, adsorption on the intact surface, S vacancy, and Sn vacancy. Based on the energy gain and electronic analysis, our results revealed that most of the TM atoms will form a cluster, and only several TM atoms can be effectively doped into the SnS monolayer. Furthermore, the band calculations showed that only Mn substitution will give rise to a magnetic semiconductor. Thus, the reported results here provide some hidden information for further realization of the magnetic semiconductors and serve as a paradigm to prepare 2D magnetic semiconductors. [ABSTRACT FROM AUTHOR]