1. The Influence Mechanism of Quantum Well Growth and Annealing Temperature on In Migration and Stress Modulation Behavior.
- Author
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Yan, Luyi, Liang, Feng, Yang, Jing, Chen, Ping, Jiang, Desheng, and Zhao, Degang
- Subjects
OPTOELECTRONIC devices ,INDIUM gallium nitride ,TEMPERATURE control ,LUMINESCENCE ,STARK effect ,QUANTUM wells ,INDIUM - Abstract
This study explores the effects of growth temperature of InGaN/GaN quantum well (QW) layers on indium migration, structural quality, and luminescence properties. It is found that within a specific range, the growth temperature can control the efficiency of In incorporation into QWs and strain energy accumulated in the QW structure, modulating the luminescence efficiency. Temperature-dependent photoluminescence (TDPL) measurements revealed a more pronounced localized state effect in QW samples grown at higher temperatures. Moreover, a too high annealing temperature will enhance indium migration, leading to an increased density of non-radiative recombination centers and a more pronounced quantum-confined Stark effect (QCSE), thereby reducing luminescence intensity. These findings highlight the critical role of thermal management in optimizing the performance of InGaN/GaN MQWs in LEDs and other photoelectronic devices. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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