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The applications of silver nanowires (AgNWs) are clearly relevant to their purity and morphology. Therefore, the synthesis parameters should be precisely adjusted in order to obtain AgNWs with a high aspect ratio. Consequently, controlling the reaction time versus the reaction temperature of the AgNWs is crucial to synthesize AgNWs with a high crystallinity and is important in fabricating optoelectronic devices. In this work, we tracked the morphological alterations of AgNWs during the growth process in order to determine the optimal reaction time and temperature. Thus, here, the UV-Vis absorption spectra were used to investigate how the reaction time varies with the temperature. The reaction was conducted at five different temperatures, 140-180 °C. As a result, an equation was developed to describe the relationship between them and to calculate the reaction time at any given reaction temperature. It was observed that the average diameter of the NWs was temperature-dependent and had a minimum value of 23 nm at a reaction temperature of 150 °C. A significant purification technique was conducted for the final product at a reaction temperature of 150 °C with two different speeds in the centrifuge to remove the heavy and light by-products. Based on these qualities, a AgNWs-based porous Si (AgNWs/P-Si) device was fabricated, and current-time pulsing was achieved using an ultra-violet (UV) irradiation of a 375 nm wavelength at four bias voltages of 1 V, 2 V, 3 V, and 4 V. We obtained a high level of sensitivity and detectivity with the values of 2247.49% and 2.89 × 10 12 Jones, respectively. The photocurrent increased from the μA range in the P-Si to the mA range in the AgNWs/P-Si photodetector due to the featured surface plasmon resonance of the AgNWs compared to the other metals.

Despite many dedicated efforts, the fabrication of high-quality ZnO-incorporated Zinc@Silicon (Zn@Si) core-shell quantum dots (ZnSiQDs) with customized properties remains challenging. In this study, we report a new record for the brightness enhancement of ZnSiQDs prepared via a unified top-down and bottom-up strategy. The top-down approach was used to produce ZnSiQDs with uniform sizes and shapes, followed by the bottom-up method for their re-growth. The influence of various NH 4 OH contents (15 to 25 µL) on the morphology and optical characteristics of ZnSiQDs was investigated. The ZnSiQDs were obtained from the electrochemically etched porous Si (PSi) with Zn inclusion (ZnPSi), followed by the electropolishing and sonication in acetone. EFTEM micrographs of the samples prepared without and with NH 4 OH revealed the existence of spherical ZnSiQDs with a mean diameter of 1.22 to 7.4 nm, respectively. The emission spectra of the ZnSiQDs (excited by 365 nm) exhibited bright blue, green, orange-yellow, and red luminescence, indicating the uniform morphology related to the strong quantum confinement ZnSiQDs. In addition, the absorption and emission of the ZnSiQDs prepared with NH 4 OH were enhanced by 198.8% and 132.6%, respectively. The bandgap of the ZnSiQDs conditioned without and with NH 4 OH was approximately 3.6 and 2.3 eV, respectively.

Ultraviolet (UV) photodetectors (PDs) based on high-quality well-aligned ZnO nanorods (NRs) were fabricated using both modified and conventional chemical bath deposition (CBD) methods. The modified chemical bath deposition (M-CBD) method was made by adding air bubbles to the growth solution during the CBD process. The viability and effectiveness of M-CBD were examined by developing UV PDs based on ZnO NRs. The ZnO nano-seed layer was coated on a glass substrate utilizing radiofrequency (RF) sputtering. The impact of the different growth-times on morphology, growth rate, crystal structure, and optical and chemical properties were investigated systematically using different characterization techniques, such as field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) analysis, UV-VIS double beam spectrometer, and energy dispersive X-ray analysis (EDX), respectively. The Al/ZnO UV PDs based on ZnO nanorods were fabricated with optimum growth conditions through the two methods of preparation. This study showed that the synthesized ZnO NRs using the M-CBD method for different growth times possess better properties than the conventional method under similar deposition conditions. Despite having the highest aspect ratio and growth rate of ZnO NRs, which were found at 4 h growth duration for both methods, the aspect ratio of ZnO NRs using the M-CBD technique was comparatively higher than the conventional CBD method. Besides, the UV PDs fabricated by the M-CBD method at 5 V bias voltage showed high sensitivity, short response time, quick recovery time, high gain, low dark current, and high photocurrent compared with the UV PD device fabricated by the conventional CBD method.