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An ultra-compact broadband silicon polarizing beam splitter is proposed based on a tilted nano-grating structure. A light cross coupling can be realized for transverse-magnetic mode, while the transverse-electric light can almost completely output from the through port. The length of the coupling region is only 6.8 μm, while an extinction ratio of 23.76 dB can be realized at a wavelength of 1550 nm. As a proof of concept, the device was fabricated by a commercial silicon photonic foundry. It can realize a 19.84 dB extinction ratio and an 80 nm working bandwidth with an extinction ratio of larger than 10 dB. The presented device also shows a good fabrication tolerance to the structure deviations, which is favorable for its practical applications in silicon photonics.

Based on our recent work, this paper reviews our theoretical study on gallium nitride (GaN) light-emitting-diode (LED). The focus of the paper is to improve LED light extraction efficiency through various nano-grating designs. The gratings can be designed at different locations, such as at the top, the middle, and the bottom, on the LED. They also can be made of different materials. In this study, we first present a GaN LED error-grating simulation model. Second, nano Indium Tin Oxide (ITO) top gratings are studied and compared with conventional LED (CLED) using standing wave analysis. Third, we present results related to a patterned sapphire substrate (PSS), SiO₂ Nanorod array (NR), and Ag bottom reflection layer. Finally, we investigate the nano-top ITO grating performance over different wavelengths to validate our design simulation, which focusing on a single wavelength of 460 nm.