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Light-emitting diodes (LEDs) are used widely, but when operated at a low-voltage direct current (DC), they consume unnecessary power because a converter must be used to convert it to an alternating current (AC). DC flow across devices also causes charge accumulation at a high current density, leading to lowered LED reliability. In contrast, gallium-nitride-based LEDs can be operated without an AC-DC converter being required, potentially leading to greater energy efficiency and reliability. In this study, we developed a multicolor AC-driven light-emitting device by integrating a WSe 2 monolayer and AlGaInP-GaInP multiple quantum well (MQW) structures. The CVD-grown WSe 2 monolayer was placed on the top of an AlGaInP-based light-emitting diode (LED) wafer to create a two-dimensional/three-dimensional heterostructure. The interfaces of these hybrid devices are characterized and verified through transmission electron microscopy and energy-dispersive X-ray spectroscopy techniques. More than 20% energy conversion from the AlGaInP MQWs to the WSe 2 monolayer was observed to boost the WSe 2 monolayer emissions. The voltage dependence of the electroluminescence intensity was characterized. Electroluminescence intensity-voltage characteristic curves indicated that thermionic emission was the mechanism underlying carrier injection across the potential barrier at the Ag-WSe 2 monolayer interface at low voltage, whereas Fowler-Nordheim emission was the mechanism at voltages higher than approximately 8.0 V. These multi-color hybrid light-emitting devices both expand the wavelength range of 2-D TMDC-based light emitters and support their implementation in applications such as chip-scale optoelectronic integrated systems, broad-band LEDs, and quantum display systems.

All-inorganic perovskite CsPbBr 3 -Cs 4 PbBr 6 composite nanocrystals (NCs) were synthesized via a convenient solution process without inert gas protection and systematically studied as green phosphors for light emitting diode (LED) applications. While colloidal composite NCs emit green color with an emission peak at around 515 nm, their thin films on top of blue GaN chips exhibit a redshift of ∼15-20 nm due to subsequential aggregation in solid state. The Commission Internationale De I'eclairage (CIE) chromaticity coordinates of the green LEDs assembled by composite NCs reached (0.201, 0.746) with nearly 100% green ratio. Moreover, the pure green LED displayed a luminous efficiency of 45 lm W -1 under 10 mA driving current. The colloidal CsPbBr 3 -Cs 4 PbBr 6 composite NCs have the photoluminescence quantum yield (PLQY) as high as 74%. The high PLQY originates from cubic CsPbBr 3 NCs well passivated by the zero-dimensional Cs 4 PbBr 6 matrix, substantially suppressing the nonradiative recombination. The comparison between the green LEDs fabricated with pure and composite perovskites imply that the CsPbBr 3 -Cs 4 PbBr 6 composites with higher quantum yield could be an effective way to get the brightness and the stability of pure green LEDs.

Utilization of light to boost the performance of gas sensors allows us to operate sensor devices at room temperature. Here, we, for the first time, demonstrated an indoor light-activated 3D cone-shaped MoS2 bilayer-based NO gas sensor with ppb-level detection operated at room-temperature. Large-area cone-shaped (CS)-MoS2 bilayers were grown by depositing 2 nm-thick MoO3 layers on a 2'' three-dimensional (3D) cone-patterned sapphire substrate (CPSS) followed by a sulfurization process via chemical vapor deposition. Because the exposed area of MoS2 bilayers is increased by 30%, the CS-MoS2 gas sensor (GS) demonstrated excellent performance with a response of ∼470% and a fast response time of ∼25 s after exposure to 1 ppm of NO gas illuminated by ultraviolet (UV) light with a wavelength of 365 nm. Such extraordinary performance at room temperature is attributed to the enhanced light absorption because of the light scattering effect caused by the 3D configuration and photo-desorption induced by UV illumination. For NO concentrations ranging from 2 ppm down to 0.06 ppm, the CS-MoS2 GS demonstrated a stable sensing behavior with a high response and fast response time (470% and 25 s at 2 ppm NO) because of the light absorption enhanced by the 3D structure and photo-desorption under constant UV illumination. The CS-MoS2 GS exhibits a high sensitivity (∼189.2 R% ppm-1), allowing the detection of NO gas at 0.06 ppm in 130 s. In addition, the 3D cone-shaped structure prolonged the presence of sulfur vapor around MoO3, allowing MoO3 to react with sulfur completely. Furthermore, the CS-MoS2 GS using an indoor lighting to detect NO gas at room temperature was demonstrated for the first time where the CS-MoS2 GS exhibits a stable cycling behavior with a high response (165% at 1 ppm NO) in 50 s; for concentration as low as ∼0.06 ppm, the response of ∼75% in 150 s can be achieved.

Comprehensive studies were carried out to understand the origin of the current hysteresis effects in highly efficient C 60 -CH 3 NH 3 PbI 3 (MAPbI 3 ) heterojunction solar cells, using atomic-force microscopy, transmittance spectra, photoluminescence spectra, X-ray diffraction patterns and a femtosecond time-resolved pump-probe technique. The power conversion efficiency (PCE) of C 60 -MAPbI 3 solar cells can be increased to 18.23% by eliminating the point (lattice) defects in the MAPbI 3 thin film which is fabricated by using the one-step spin-coating method with toluene washing treatment. The experimental results show that the point defects and surface defects of the MAPbI 3 thin films can be minimized by varying the dropping time of the washing solvent. The point defects (surface defects) can be reduced with an (a) increase (decrease) in the dropping time, resulting in an optimized dropping time for obtaining the defect-minimized MAPbI 3 thin film deposited on top of the C 60 thin film. Consequently, the formation of the defect-minimized MAPbI 3 thin film allows for high-efficiency MAPbI 3 solar cells.