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Your search keyword '"Liang, Xing"' showing total 21 results
Start Over Author "Liang, Xing" Journal nanoscale
21 results on '"Liang, Xing"'

20. Thermal conductivity of V 2 O 5 nanowires and their contact thermal conductance.

Author

Wang Q, Liang X, Liu B, Song Y, Gao G, and Xu X

Abstract

Vanadium pentoxide (V2O5)-based composites show outstanding performances as cathode materials in lithium-ion batteries. However, their inferior thermal conductivity restricts the heat dissipation through the cathode electrode. In this study, we measured the thermal conductivity of V2O5 nanowires using the thermal bridge method and found that their thermal conductivity is 3.84 ± 0.38 W m-1 K-1 at T = 300 K. The contact thermal resistance between two nanowires with the same size was measured to be up to 50%-80% of the total thermal resistance in the measured samples, indicating that their contact is the bottleneck for thermal dissipation.

Published
2020
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21. Controlled growth of large-area anisotropic ReS 2 atomic layer and its photodetector application.

Author

Li X, Cui F, Feng Q, Wang G, Xu X, Wu J, Mao N, Liang X, Zhang Z, Zhang J, and Xu H

Abstract

As an anisotropic 2D layered material, rhenium disulfide (ReS 2 ) has attracted much attention because of its unusual properties and promising applications in electronic and optoelectronic devices. However, the low lattice symmetry and interlayer decoupling of ReS 2 make asymmetric growth and out-of-plane growth occur quite easily; therefore, thick flake, dendritic and flower-like structures of ReS 2 have mostly been obtained previously. Here, we report on an approach based on space-confined epitaxial growth for the controlled synthesis of ReS 2 films. Using this approach, large-area and high-quality ReS 2 films with uniform monolayer thickness can grow on a mica substrate. Furthermore, the weak van der Waals interaction between the surface of mica and ReS 2 clusters, which favors surface-confined growth while avoiding out-of-plane growth, is critical for growing ReS 2 with uniform monolayer thickness. The morphological evolution of ReS 2 with the growth temperature reveals that asymmetric growth can be suppressed at relatively low temperatures. A ReS 2 field-effect transistor displayed a current on/off ratio of 10 6 and an electron mobility of up to 40 cm 2 V -1 s -1 , with outstanding photoresponsivity of 12 A W -1 . This work not only promotes the large-scale employment of ReS 2 in high-performance optoelectronic devices, but also provides a means of controlling the unusual growth behavior of low-lattice-symmetry 2D layered materials.

Published
2016
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