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High-performance visible and near-infrared photodetection and single-pixel imaging can be achieved by our γ-InSe/Ge photodiode at zero bias. Meanwhile, a maximum polarization sensitivity of 3.01 is obtained under 635 nm among the broadband spectrum.

Two-dimensional (2D) polarization-sensitive detection as a new photoelectric application technology is extensively investigated. However, most devices are mainly based on individual anisotropic materials, which suffer from large dark current and relatively low anisotropic ratio, limiting the practical application in polarized imaging system. Herein, we design a van der Waals (vdWs) p-type SnS/n-type InSe vertical heterojunction with proposed type-II band alignment

Mobility engineering is one of the most important challenges that determine the optoelectronic performance of two-dimensional (2D) materials. So far, charged-impurity scattering and electrical-contact barriers have been suppressed through high-κ dielectrics and seamless contact engineering, giving rise to carrier-mobility improvement in exfoliated 2D semiconducting MoS2. Here we demonstrate a facile and scalable technique to effectively suppress both Coulomb scattering and electron–phonon scattering via the HfO2 overlayer, resulting in a large mobility improvement in CVD-grown monolayer MoS2, in excess of 60 cm2 V−1 s−1. Surface passivation and suppression of Coulomb scattering can partially contribute to the mobility increase. Interestingly, we correlate the mobility increase with phonon quenching through Raman and temperature-dependent mobility measurements. The experimental method is facile, industrially scalable, and renders phonon engineering an additional leverage towards further improvements in 2D semiconductor mobility and device performance.

Mobility engineering is one of the most important challenges that determine the optoelectronic performance of two-dimensional (2D) materials. So far, charged-impurity scattering and electrical-contact barriers have been suppressed through high-κ dielectrics and seamless contact engineering, giving rise to carrier-mobility improvement in exfoliated 2D semiconducting MoS2. Here we demonstrate a facile and scalable technique to effectively suppress both Coulomb scattering and electron-phonon scattering via the HfO2 overlayer, resulting in a large mobility improvement in CVD-grown monolayer MoS2, in excess of 60 cm2 V-1 s-1. Surface passivation and suppression of Coulomb scattering can partially contribute to the mobility increase. Interestingly, we correlate the mobility increase with phonon quenching through Raman and temperature-dependent mobility measurements. The experimental method is facile, industrially scalable, and renders phonon engineering an additional leverage towards further improvements in 2D semiconductor mobility and device performance.

Recently, molybdenum disulfide (MoS(2)) has become a popular material due to its unique electrical and chemical properties, and its use as a potential substitute for graphene. Herein, we report a new two-step method by utilizing thermal evaporation-sulfurization to synthesize MoS(2) which possesses an innovative micro-ring structure. The average statistical values of the height, width and external diameter were 69 nm, 0.3 μm and 5.0 μm, respectively. Then the mechanism for the growth of such MoS(2) micro-rings was proposed. A device based on the MoS(2) micro-ring was prepared by electron beam lithography, and its electrical transport properties were determined at different temperatures.

Layered GaS nanosheets have been attracting increasing research interests due to their highly anisotropic structural, electrical, optical, and mechanical properties, which are useful for many applications. However, single-layer or few-layer GaS-based photodetectors have been rarely reported. Here a few-layer GaS two-terminal photodetector with a fast and stable response has been fabricated. It shows different photo-responses in various gas environments. A higher photo-response (64.43 A W(-1)) and external quantum efficiency (EQE) (12,621%) is obtained in ammonia (NH3) than in air or oxygen (O2). A theoretical investigation shows that the charge transfer between the adsorbed gas molecules and the photodetector leads to the different photo-responses.