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The HfO2/TiO2/HfO2 trilayer-structure resistive random access memory (RRAM) devices have been fabricated on Pt- and TiN-coated Si substrates with Pt top electrodes by atomic layer deposition (ALD). The effect of the bottom electrodes of Pt and TiN on the resistive switching properties of trilayer-structure units has been investigated. Both Pt/HfO2/TiO2/HfO2/Pt and Pt/HfO2/TiO2/HfO2/TiN exhibit typical bipolar resistive switching behavior. The dominant conduction mechanisms in low and high resistance states (LRS and HRS) of both memory cells are Ohmic behavior and space-charge-limited current, respectively. It is found that the bottom electrodes of Pt and TiN have great influence on the electroforming polarity preference, ratio of high and low resistance, and dispersion of the operating voltages of trilayer-structure memory cells. Compared to using symmetric Pt top/bottom electrodes, the RRAM cells using asymmetric Pt top/TiN bottom electrodes show smaller negative forming voltage of −3.7 V, relatively narrow distribution of the set/reset voltages and lower ratio of high and low resistances of 102. The electrode-dependent electroforming polarity can be interpreted by considering electrodes’ chemical activity with oxygen, the related reactions at anode, and the nonuniform distribution of oxygen vacancy concentration in trilayer-structure of HfO2/TiO2/HfO2 on Pt- and TiN-coated Si. Moreover, for Pt/HfO2/TiO2/HfO2/TiN devices, the TiN electrode as oxygen reservoir plays an important role in reducing forming voltage and improving uniformity of resistive switching parameters.

In situ-formed SiO2 was introduced into HfO2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO2/SiO2 high-k gate dielectric stacks on Ge have been well investigated. It has been demonstrated that Si-O-Ge interlayer is formed on Ge surface during the in situ PEALD SiO2 deposition process. This interlayer shows fantastic thermal stability during annealing without obvious Hf-silicates formation. In addition, it can also suppress the GeO2 degradation. The electrical measurements show that capacitance equivalent thickness of 1.53 nm and a leakage current density of 2.1 × 10−3 A/cm2 at gate bias of Vfb + 1 V was obtained for the annealed sample. The conduction (valence) band offsets at the HfO2/SiO2/Ge interface with and without PDA are found to be 2.24 (2.69) and 2.48 (2.45) eV, respectively. These results indicate that in situ PEALD SiO2 may be a promising interfacial control layer for the realization of high-quality Ge-based transistor devices. Moreover, it can be demonstrated that PEALD is a much more powerful technology for ultrathin interfacial control layer deposition than MOCVD.

ZnO nano-clips with better monodispersion were prepared successfully using zinc acetate hydrate (Zn(OAc)2·nH2O) as Zn source and ethylene glycol (EG) as solvent by a simple solution-based route-polyol process. The effect of solution concentration on the formation of ZnO nano-clips has been investigated deeply. We first prove that the 0.01 M Zn(OAc)2·nH2O can react with EG without added water or alkaline, producing ZnO nano-clips with polycrystalline wurtzite structure at 170 °C. As-synthesized ZnO nano-clips contain a lot of aggregated nanocrystals (~ 5 to 15 nm) with high specific surface area of 88 m2/g. The shapes of ZnO nano-clips basically keep constant with improved crystallinity after annealing at 400–600 °C. The lower solution concentration and slight amount of H2O play a decisive role in ZnO nano-clip formation. When the solution concentration is ≤ 0.0125 M, the complexing and polymerization reactions between Zn(OAc)2·nH2O and EG predominate, mainly elaborating ZnO nano-clips. When the solution concentration is ≥ 0.015 M, the alcoholysis and polycondensation reactions of Zn(OAc)2·nH2O and EG become dominant, leading to ZnO particle formation with spherical and elliptical shapes. The possible growth mechanism based on a competition between complexing and alcoholysis of Zn(OAc)2·nH2O and EG has been proposed. Electronic supplementary material The online version of this article (10.1186/s11671-018-2458-9) contains supplementary material, which is available to authorized users.

N-doped ZnO/g-C3N4 composites have been successfully prepared via a facile and cost-effective sol-gel method. The nanocomposites were systematically characterized by XRD, FE-SEM, HRTEM, FT-IR, XPS, and UV-vis DRS. The results indicated that compared with the pure N-doped ZnO, the absorption edge of binary N-doped ZnO/g-C3N4 shifted to a lower energy with increasing the visible-light absorption and improving the charge separation efficiency, which would enhance its photocatalytic activity. Compared with the pure g-C3N4, ZnO, N-doped ZnO and the composite ZnO/g-C3N4, the as-prepared N-doped ZnO/g-C3N4 exhibits a greatly enhanced photocatalytic degradation of methylene blue and phenol under visible-light irradiation. Meanwhile, N-doped ZnO/g-C3N4 possesses a high stability. Finally, a proposed mechanism for N-doped ZnO/g-C3N4 is also discussed. The improved photocatalysis can be attributed to the synergistic effect between N-doped ZnO and g-C3N4, including the energy band structure and enhanced charge separation efficiency.

Co3O4-coated commercial TiO2 powders (P25) p-n junction photocatalysts were prepared by plasma-enhanced atomic layer deposition (PEALD) technique. The structure, morphology, bandgap, and photocatalytic properties under ultraviolet light were investigated systematically. Although the deposition of Co3O4 does not change the anatase structure and crystallite size of P25 powders, the ultraviolet photocatalytic activity has been improved evidently. For the Co3O4-coated P25 powders, the trace Co ions exist as Co3O4 nanoparticles attached to TiO2 powder surface instead of the occupation of Ti4+ position in TiO2 lattice. The Co3O4-coated P25 powders exhibit enhanced photocatalytic degradation efficiency of almost 100% for methylene blue in 1.5 h under ultraviolet light, compared with P25 of 80%. The Mott-Schottky plots of photocatalyst powders confirm the p-n heterojunction formation in Co3O4–TiO2 nanocomposite materials, which is beneficial to increase the efficiency of photogenerated electron-hole separation. In addition, the Co3O4 coating also promotes the adsorption of organic dyes of methylene blue on P25 powders.

In situ external magnetic field was applied during the synthesis of FePt nanoparticles via a chemical solution method. FePt nanoparticle films were prepared on Si by a drop-coating method with and without a magnetic field. Annealing at 700 °C in reductive atmosphere was explored to obtain ferromagnetic FePt L10 phase. The effect of in situ-applied magnetic field on the structure, morphology, and magnetic properties of FePt nanoparticle films was characterized. It is found that the applied magnetic field during the chemical synthesis of FePt nanoparticles plays a key role in the crystallinity and magnetic property of FePt nanoparticle films. As-synthesized FePt nanoparticles under the magnetic field are monodispersed and can be self-assembled over a larger area by a dropping method. The applied magnetic field during the synthesis of FePt nanoparticles not only significantly improves the nanoparticles’ c-axis preferred orientation but also benefits the phase transition of FePt nanoparticles from face-centered cubic to face-centered tetragonal structure during the annealing process. The FePt nanoparticle films derived under magnetic field also show some magnetic anisotropy.

Low-temperature β-BiNbO4 powders (denoted as Low-β) were prepared by citrate and Pechini methods using homemade water-soluble niobium precursors. The addition of ethylene glycol and the resultant polymerization effect on the synthesis and visible-light photocatalytic performance of β-BiNbO4 powders were fully investigated. The polymerization effect is beneficial to lower the phase formation temperature and obtain smaller particle catalysts. Both methods can synthesize catalysts with excellent performance of visible-light degradation of methyl violet (MV). The Low-β BiNbO4 powder prepared by citrate method shows better degradation rate of about 1 h to decompose 80 % of MV and also displays good photocatalytic stability. The photodegradation of MV under the visible-light irradiation followed the pseudo-first-order kinetics according to the Langmuir-Hinshelwood model, and the obtained first-order rate constant and half-time are 2.85 × 10(-2) min(-1) and 24.3 min, respectively. The better photocatalytic performance of BiNbO4 powders prepared by citrate method can be attributed to its smaller band gap and better crystallinity.

A novel photocatalyst of Ta-doped ZnO nanoparticles was prepared by a modified Pechini-type method. The antimicrobial study of Ta-doped ZnO nanoparticles on several bacteria of Gram-positive Bacillus subtilis (B. subtilis) and Staphylococcus aureus (S. aureus) and Gram-negative Escherichia coli (E. coli) and Pseudomonas aeruginosa (P. aeruginosa) were performed using a standard microbial method. The Ta-doping concentration effect on the minimum inhibitory concentration (MIC) of various bacteria under dark ambient has been evaluated. The photocatalytical inactivation of Ta-doped ZnO nanoparticles under visible light irradiation was examined. The MIC results indicate that the incorporation of Ta(5+) ions into ZnO significantly improve the bacteriostasis effect of ZnO nanoparticles on E. coli, S. aureus, and B. subtilis in the absence of light. Compared to MIC results without light irradiation, Ta-doped ZnO and pure ZnO nanoparticles show much stronger bactericidal efficacy on P. aeruginosa, E. coli, and S. aureus under visible light illumination. The possible antimicrobial mechanisms in Ta-doped ZnO systems under visible light and dark conditions were also proposed. Ta-doped ZnO nanoparticles exhibit more effective bactericidal efficacy than pure ZnO in dark ambient, which can be attributed to the synergistic effect of enhanced surface bioactivity and increased electrostatic force due to the incorporation of Ta(5+) ions into ZnO. Based on the antibacterial tests, 5 % Ta-doped ZnO is a more effective antimicrobial agent than pure ZnO.

In this work, a kind of new memristor with the simple structure of Pt/HfOx/ZnOx/TiN was fabricated completely via combination of thermal-atomic layer deposition (TALD) and plasma-enhanced ALD (PEALD). The synaptic plasticity and learning behaviors of Pt/HfOx/ZnOx/TiN memristive system have been investigated deeply. Multilevel resistance states are obtained by varying the programming voltage amplitudes during the pulse cycling. The device conductance can be continuously increased or decreased from cycle to cycle with better endurance characteristics up to about 3 × 103 cycles. Several essential synaptic functions are simultaneously achieved in such a single double-layer of HfOx/ZnOx device, including nonlinear transmission properties, such as long-term plasticity (LTP), short-term plasticity (STP), and spike-timing-dependent plasticity. The transformation from STP to LTP induced by repetitive pulse stimulation is confirmed in Pt/HfOx/ZnOx/TiN memristive device. Above all, simple structure of Pt/HfOx/ZnOx/TiN by ALD technique is a kind of promising memristor device for applications in artificial neural network.