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In this work, the evolution of PdAg and PdAuAg alloy nanostructures is demonstrated on sapphire (0001) via the solid-state dewetting of multi-metallic thin films. Various surface configurations, size, and arrangements of bi- and tri-metallic alloy nanostructures are fabricated as a function of annealing temperature, annealing duration, film thickness, and deposition arrangements such as bi-layers (Pd/Ag), tri-layers (Pd/Au/Ag), and multi-layers (Pd/Au/Ag × 5). Specifically, the tri-layers film shows the gradual evolution of over-grown NPs, voids, wiggly nanostructures, and isolated PdAuAg alloy nanoparticles (NPs) along with the increased annealing temperature. In contrast, the multi-layers film with same thickness show the enhanced dewetting rate, which results in the formation of voids at relatively lower temperature, wider spacing, and structural regularity of alloy NPs at higher temperature. The dewetting enhancement is attributed to the increased number of interfaces and reduced individual layer thickness, which aid the inter-diffusion process at the initial stage. In addition, the time evolution of the Pd150 nm/Ag80 nm bi-layer films at constant temperature show the wiggly-connected and isolated PdAg alloy NPs. The overall evolution of alloy NPs is discussed based on the solid-state dewetting mechanism in conjunction with the diffusion, inter-diffusion, alloying, sublimation, Rayleigh instability, and surface energy minimization. Depending upon their surface morphologies, the bi- and tri-metallic alloy nanostructures exhibit the dynamic reflectance spectra, which show the formation of dipolar (above 700 nm) and quadrupolar resonance peaks (~ 380 nm) and wide dips in the visible region as correlated to the localized surface plasmon resonance (LSPR) effect. An absorption dip is readily shifted from ~ 510 to ~ 475 nm along with the decreased average size of alloy nanostructures. Electronic supplementary material The online version of this article (10.1186/s11671-018-2551-0) contains supplementary material, which is available to authorized users.

Au nanoparticles (NPs) have been utilized in a wide range of device applications as well as catalysts for the fabrication of nanopores and nanowires, in which the performance of the associated devices and morphology of nanopores and nanowires are strongly dependent on the size, density, and configuration of the Au NPs. In this paper, the evolution of the self-assembled Au nanostructures and NPs on sapphire (0001) is systematically investigated with the variation of annealing temperature (AT) and dwelling time (DT). At the low-temperature range between 300 and 600 °C, three distinct regimes of the Au nanostructure configuration are observed, i.e., the vermiform-like Au piles, irregular Au nano-mounds, and Au islands. Subsequently, being provided with relatively high thermal energy between 700 and 900 °C, the round dome-shaped Au NPs are fabricated based on the Volmer-Weber growth model. With the increased AT, the size of the Au NPs is gradually increased due to a more favorable surface diffusion while the density is gradually decreased as a compensation. On the other hand, with the increased DT, the size and density of Au NPs decrease due to the evaporation of Au at relatively high annealing temperature at 950 °C. Electronic supplementary material The online version of this article (doi:10.1186/s11671-015-1200-0) contains supplementary material, which is available to authorized users.

We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propose two methods of compensating for the variation of the current level with the temperature in the range of 25–150°C, involving the application of a suitable (1) positive or (2) negative substrate bias. These two methods were compared by two-dimensional numerical simulations. Although both approaches show constant on-state current saturation characteristics over the proposed temperature range, the latter shows an improvement in the off-state control of up to five orders of magnitude (−5.2 × 10−6).

The evolution of InAs quantum dot (QD) formation is studied on GaAs ring-like nanostructures fabricated by droplet homo-epitaxy. This growth mode, exclusively performed by a hybrid approach of droplet homo-epitaxy and Stransky-Krastanor (S-K) based QD self-assembly, enables one to form new QD morphologies that may find use in optoelectronic applications. Increased deposition of InAs on the GaAs ring first produced a QD in the hole followed by QDs around the GaAs ring and on the GaAs (100) surface. This behavior indicates that the QDs prefer to nucleate at locations of high monolayer (ML) step density.

The size, density, and configurations of Au nanoparticles (NPs) can play important roles in controlling the electron mobility, light absorption, and localized surface plasmon resonance, and further in the Au NP-assisted nanostructure fabrications. In this study, we present a systematical investigation on the evolution of Au NPs and nanostructures on Si (111) by controlling the deposition amount (DA), annealing temperature (AT), and dwelling time (DT). Under an identical growth condition, the morphologies of Au NPs and nanostructures drastically evolve when the DA is only slightly varied, based on the Volmer-Weber and coalescence models: i.e. I: mini NPs, II: mid-sized round dome-shaped Au NPs, III: large Au NPs, and IV: coalesced nanostructures. With the AT control, three distinctive ranges are observed: i.e., NP nucleation, Au NPs maturation and melting. The gradual dimensional expansion of Au NPs is always compensated with the density reduction, which is explained with the thermodynamic theory. The DT effect is relatively minor on Au NPs, a sharp contrast to other metallic NPs, which is discussed based on the Ostwald-ripening. Electronic supplementary material The online version of this article (doi:10.1186/s11671-015-1084-z) contains supplementary material, which is available to authorized users.

Metallic nanoparticles have been widely witnessed in many applications: serving as the catalysts for various nanowire systems, as the active mediums of various device applications, and also for the nanoscale templates for hybrid quantum structures. In the performance of devices and configurations of the resulting nanostructures, the size and density of nanoparticles play critical roles. In this paper, the control of self-assembled Au droplets on GaAs (100), (110), and (111) is systematically investigated through the variation of deposition amount (DA), annealing temperature (AT), and dwelling time (DT). Based on the Volmer–Weber growth model, the formation of Au droplets and dramatic evolution of Au nanostructures on various GaAs surfaces is observed from the Au clusters to the round-dome shapes with the AT variation between 250 and 550 °C. With the systematic DA control, a radical size and density evolution of Au droplets shows the size expansion of over 400 % in average height and 800 % in average lateral diameter, while the density shows over two orders of decrease. With the DT variation, the self-assembled Au droplets tend to grow larger due to the Ostwald ripening while a clear distinction among the surface indexes is observed. Electronic supplementary material The online version of this article (doi:10.1186/s11671-015-0950-z) contains supplementary material, which is available to authorized users.

In this paper, the systematic evolution process of self-assembled Au droplets is successfully demonstrated on GaAs (111)A, (110), (100), and (111)B. On various GaAs substrates, self-assembled Au clusters begin to nucleate at around 300°C, and then, they develop into wiggly Au nanostructures at 350°C. Between 400°C and 550°C, the self-assembled dome-shaped Au droplets with fine uniformity are fabricated with various sizes and densities based on the Volmer-Weber growth mode. Depending on the annealing temperature, the size including the average height and lateral diameter and the density of Au droplets show the opposite trend of increased size with correspondingly decreased density as a function of the annealing temperature due to the difference in the diffusion length of adatoms at varied activation energy. Under an identical growth condition, depending on the surface index, the size and density of Au droplets show a clear distinction, observed throughout the temperature range. The results are systematically analyzed and discussed in terms of atomic force microscopy (AFM) images, cross-sectional line profiles, and Fourier filter transform (FFT) power spectra as well as the summary plots of the size and density.

We investigate the effect of annealing temperature on self-assembled Au droplets on Si (111). The annealing temperature is systematically varied while fixing other growth parameters such as deposition amount and annealing duration clearly to observe the annealing temperature effect. Self-assembled Au droplets are fabricated by annealing from 50°C to 850°C with 2-nm Au deposition for 30 s. With increased annealing temperatures, Au droplets show gradually increased height and diameter while the density of droplets progressively decreases. Self-assembled Au droplets with fine uniformity can be fabricated between 550°C and 800°C. While Au droplets become much larger with increased deposition amount, the extended annealing duration only mildly affects droplet size and density. The results are systematically analyzed with cross-sectional line profiles, Fourier filter transform power spectra, height histogram, surface area ratio, and size and density plots. This study can provide an aid point for the fabrication of nanowires on Si (111).

The effect of crystalline plane orientations of Silicon carbide (SiC) (a-, m-, and c-planes) on the local oxidation on 4H-SiC using atomic force microscopy (AFM) was investigated. It has been found that the AFM-based local oxidation (AFM-LO) rate on SiC is closely correlated to the atomic planar density values of different crystalline planes (a-plane, 7.45 cm-2; c-plane, 12.17 cm-2; and m-plane, 6.44 cm-2). Specifically, at room temperature and under about 40% humidity with a scan speed of 0.5 μm/s, the height of oxides on a- and m-planes 4H-SiC is 6.5 and 13 nm, respectively, whereas the height of oxides on the c-plane increased up to 30 nm. In addition, the results of AFM-LO with thermally grown oxides on the different plane orientations in SiC are compared.

In this study, nano-scale honeycomb-shaped structures with anti-reflection properties were successfully formed on SiC. The surface of 4H-SiC wafer after a conventional photolithography process was etched by inductively coupled plasma. We demonstrate that the reflection characteristic of the fabricated photodiodes has significantly reduced by 55% compared with the reference devices. As a result, the optical response Iillumination/Idark of the 4H-SiC photodiodes were enhanced up to 178%, which can be ascribed primarily to the improved light trapping in the proposed nano-scale texturing.

Strain-free GaAs/Al0.33Ga0.67As quantum rings are fabricated by droplet epitaxy. Both photoresponse and photoluminescence spectra confirm optical transitions in quantum rings, suggesting that droplet epitaxial nanomaterials are applicable to intermediate band solar cells. The effects of post-growth annealing on the quantum ring solar cells are investigated, and the optical properties of the solar cells with and without thermal treatment are characterized by photoluminescence technique. Rapid thermal annealing treatment has resulted in the significant improvement of material quality, which can be served as a standard process for quantum structure solar cells grown by droplet epitaxy.

We report on various self-assembled In(Ga)As nanostructures by droplet epitaxy on GaAs substrates using molecular beam epitaxy. Depending on the growth condition and index of surfaces, various nanostructures can be fabricated: quantum dots (QDs), ring-like and holed-triangular nanostructures. At near room temperatures, by limiting surface diffusion of adatoms, the size of In droplets suitable for quantum confinement can be fabricated and thus InAs QDs are demonstrated on GaAs (100) surface. On the other hand, at relatively higher substrate temperatures, by enhancing the surface migrations of In adatoms, super lower density of InGaAs ring-shaped nanostructures can be fabricated on GaAs (100). Under an identical growth condition, holed-triangular InGaAs nanostructures can be fabricated on GaAs type-A surfaces, while ring-shaped nanostructures are formed on GaAs (100). The formation mechanism of various nanostructures can be understood in terms of intermixing, surface diffusion, and surface reconstruction.

We demonstrate an enhanced photo-sensitivity (PS) through an increased light-trapping using surface nano-structuring technique by inductively coupled plasma (ICP) etching on multi-walled carbon nanotube (MWCNT) etch masked Si with hexamethyl-disilazane (HMDS) dispersion. In order for a systematic comparison, four samples are prepared, respectively, by conventional photolithography and ICP etching using MWCNT as a etch mask. MWCNT-etched Si with HMDS dispersion shows the highest RMS roughness and the lowest reflectance of the four. Two test device structures are fabricated with active regions of bare-Si as a reference and MWCNT etch masked Si with HMDS dispersion. The increased light-trapping was most significant at mid-UV, somewhat less at visible and less noticeable at infrared. With an ICP-etched Si using CNT HMDS dispersion, PS is very sharply increased. This result can lead to applications in optoelectronics where the enhancement in light-trapping is important.

The fabrication of self-assembled Au droplets is successfully demonstrated on various GaAs (n11)B, where n is 2, 4, 5, 7, 8, and 9, by the systematic variation of the Au deposition amount (DA) from 2 to 12 nm with subsequent annealing at 550°C. Under an identical growth condition, the self-assembled Au droplets of mini to supersizes are successfully synthesized via the Volmer-Weber growth mode. Depending on the DA, an apparent evolution is clearly observed in terms of the average height (AH), lateral diameter (LD), and average density (AD). For example, compared with the mini Au droplets with a DA of 2 nm, AH of 22.5 nm, and LD of 86.5 nm, the super Au droplets with 12-nm DA show significantly increased AH of 316% and LD of 320%, reaching an AH of 71.1 nm and LD of 276.8 nm on GaAs (211)B. In addition, accompanied with the dimensional expansion, the AD of Au droplets drastically swings on 2 orders of magnitudes from 3.2 × 10(10) to 4.2 × 10(8) cm(-2). The results are systematically analyzed with respect to the atomic force microscopy (AFM) and scanning electron microscopy (SEM) images, energy-dispersive X-ray spectrometry (EDS) spectra, cross-sectional line profiles, Fourier filter transform (FFT) power spectra, and root-mean-square (RMS) roughness as well as the droplet dimension and density summary, respectively.

In this paper, the formation of Ga droplets on photo-lithographically patterned GaAs (100) and the control of the size and density of Ga droplets by droplet epitaxy using molecular beam epitaxy are demonstrated. In extension of our previous result from the journal Physical Status Solidi A, volume 209 in 2012, the sharp contrast of the size and density of Ga droplets is clearly observed by high-resolution scanning electron microscope, atomic force microscope, and energy dispersive X-ray spectrometry. Also, additional monolayer (ML) coverage is added to strength the result. The density of droplets is an order of magnitude higher on the trench area (etched area), while the size of droplets is much larger on the strip top area (un-etched area). A systematic variation of ML coverage results in an establishment of the control of size and density of Ga droplets. The cross-sectional line profile analysis and root mean square roughness analysis show that the trench area (etched area) is approximately six times rougher. The atomic surface roughness is suggested to be the main cause of the sharp contrast of the size and density of Ga droplets and is discussed in terms of surface diffusion.

In this paper, we report the effect of Au thickness on the self-assembled Au droplets on GaAs (111)A and (100). The evolution of Au droplets on GaAs (111)A and (100) with the increased Au thickness progress in the Volmer-Weber growth mode results in distinctive 3-D islands. Under an identical growth condition, depending on the thickness of Au deposition, the self-assembled Au droplets show different size and density distributions, while the average height is increased by approximately 420% and the diameter is increased by approximately 830%, indicating a preferential lateral expansion. Au droplets show an opposite evolution trend: the increased size along with the decreased density as a function of the Au thickness. Also, the density shifts on the orders of over two magnitude between 4.23 × 10(10) and 1.16 × 10(8) cm(-2) over the thickness range tested. At relatively thinner thicknesses below 4 nm, the self-assembled Au droplets sensitively respond to the thickness variation, evidenced by the sharper slopes of dimensions and density plots. The results are systematically analyzed and discussed in terms of atomic force microscopy (AFM), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), cross-sectional surface line profiles, and Fourier filter transform (FFT) power spectra.