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ᅟ A graded nano-glass/zirconia (G/Z) system has been developed via the infiltration of nano-glass into a nano-zirconia surface, which is advantageous for robust core-veneer bonds. The aging issue is a key for yttrium-stabilized tetragonal zirconia polycrystals (Y-TZPs), and therefore, it is necessary to evaluate the influence of aging degradation on the biocompatibility of G/Z systems before their possible clinical application. Herein, such biocompatibility testing was performed with human gingival fibroblasts (HGFs) seeded onto unaged/aged G/Z and Y-TZP for 2–72 h. Assessments included an oral mucous membrane irritation test in conjunction with analyses of cell viability, cell adhesion, and oxidative stress responses. Significant metabolic decreases in aged G/Z- and Y-TZP-treated cells were observed at 72 h. G/Z did not elicit any significant differences in cell viability compared with Y-TZP over 72 h both before and after aging. The oxidative stress data for the aged G/Z- and Y-TZP-treated cells showed a significant increase at 72 h. The G/Z specimens did not elicit any significant differences in ROS production compared with Y-TZP over 72 h both before and after aging. The cell adhesion rates of both G/Z and Y-TZP increased significantly after aging. The cell adhesion rates of G/Z and Y-TZP were not significantly different before and after aging. According to the oral mucous membrane irritation test, scores for macroscopic and microscopic observations for both the aged G/Z and unaged G/Z sides were 0, demonstrating no consequent irritation. Conclusions The excellent biocompatibility of G/Z indicates that it has potential for future clinical applications.

A major challenge of resistive switching memory (resistive random access memory (RRAM)) for future application is how to reduce the fluctuation of the resistive switching parameters. In this letter, with a statistical methodology, we have systematically analyzed the reset statistics of the conductive bridge random access memory (CBRAM) with a Cu/HfO2/Pt structure which displays bipolar switching property. The experimental observations show that the distributions of the reset voltage (V reset) and reset current (I reset) are greatly influenced by the initial on-state resistance (R on) which is closely related to the size of the conductive filament (CF) before the reset process. The reset voltage increases and the current decreases with the on-state resistance, respectively, according to the scatter plots of the experimental data. Using resistance screening method, the statistical data of the reset voltage and current are decomposed into several ranges and the distributions of them in each range are analyzed by the Weibull model. Both the Weibull slopes of the reset voltage and current are demonstrated to be independent of the on-state resistance which indicates that no CF dissolution occurs before the reset point. The scale factor of the reset voltage increases with on-state resistance while that of the reset current decreases with it. These behaviors are fully in consistency with the thermal dissolution model, which gives an insight on the physical mechanism of the reset switching. Our work has provided an inspiration on effectively reducing the variation of the switching parameters of RRAM devices.