1. Negative differential resistance in monolayer WTe2 tunneling transistors.
- Author
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Fei Liu, Jian Wang, and Hong Guo
- Subjects
- *
MONOMOLECULAR films , *TUNGSTEN compounds , *FIELD-effect transistors , *QUANTUM theory , *ENERGY bands - Abstract
We report theoretical investigations of quantum transport in monolayer transition metal dichalcogenide (TMDC) tunneling field effect transistors (TFETs). Due to the specific electronic structure of TMDC , a transmission valley is found in the conduction band (CB). For a proper choice of the doping, gate and supply voltages the TFET can produce a giant negative differential resistance (NDR) with a peak to valley ratio as large as 103. The mechanism of NDR is identified to be due to a transport-mode bottleneck, i.e., the band to band tunneling from the valence band of the source is partially blocked by a transmission valley of the CB of the drain. More generally, our calculations show that electronic structures of at least six TMDC materials possess the transmission valley. [ABSTRACT FROM AUTHOR]
- Published
- 2015
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