1. Low-resistance ohmic contacts to SiC nanowires and their applications to field-effect transistors
- Author
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Sang-Kwon Lee, Dong-Joo Kim, Seung Yong Lee, Chan-Oh Jang, and Tae-Hong Kim
- Subjects
Materials science ,business.industry ,Mechanical Engineering ,Transistor ,Doping ,Nanowire ,Bioengineering ,General Chemistry ,law.invention ,chemistry.chemical_compound ,chemistry ,Mechanics of Materials ,law ,Silicon carbide ,Comparison study ,Optoelectronics ,General Materials Science ,Field-effect transistor ,Electrical and Electronic Engineering ,business ,Low resistance ,Ohmic contact - Abstract
We report on the electrical characterization of two ohmic contacts (Ti/Au and Ni/Au) to unintentionally doped silicon carbide nanowires (SiCNWs) using the modified transmission line model (TLM) method. Our results indicate that subsequently deposited Ni/Au ohmic contacts on SiCNWs had ∼40 times lower specific contact resistances (SCRs) of 5.9 × 10(-6) ± 8.8 × 10(-6) Ω cm(2) compared to the values of Ti/Au ohmic contacts (2.6 × 10(-4) ± 3.4 × 10(-4) Ω cm(2)). We also conducted a comparison study of the electrical characteristics of top-gated SiCNW field-effect transistors (FETs) with two different ohmic contacts as used for ohmic contact studies. The electrical transport measurements on the SiCNW FET with Ni/Au ohmic contacts show much lower resistance contacts to SiC NWs and better FET performances than those for Ti/Au ohmic contact-based FETs.
- Published
- 2008
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