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In this paper, the assembly and stability of locally spotted spherical nanoparticles onto various substrates are studied. Arrays of silicon-based microcantilevers, combined with an automated three-stage spotter, are used to deposit picolitre droplets containing 300 nm diameter polyethylene glycol and 150 nm diameter amino conjugated silica nanospheres onto silicon, allylamine and acrylic acid surfaces. Matrices of colloid spots ranging from 10 to 100 µm in diameter have been successfully patterned. SEM characterizations of the nanoparticles' geometry and spatial distribution within the spots were carried out, showing the colloid aggregation at the droplet's rim and the selective stability of the printed patterns. The expected substrate functionalization was assessed by XPS characterizations of the nanoparticles' surfaces. Finally, polyethylene glycol–SiO2 nanoparticle conjugates were used as masks during a selective reactive ion etching of the silicon substrate, and silicon nanopillars have been obtained. This work opens up possibilities of high spatial resolution nanopatterning with nanoparticle conjugates.

This paper reports on a methodology to elaborate interdigitated nanoelectrode devices (INDs) at the wafer scale, relying on a mix-and-match process which combines proximity optical lithography and electron beam lithography. An optimum exposure dose allowed fabricating nanodevices, at the wafer level, with a successful yield of 97%. The final devices are bonded onto conventional TO-8 packages. Electrical characterization in a short-circuited nanoelectrode is performed, revealing a 230 µΩ cm resistivity value at 23 °C. A MEMS-based spotter made of cantilevers (called Bioplume) has been used to obtain precise functionalization of the INDs with sub-picoliter volume solutions. These INDs are the basis of multiple tunnel junction nanodevices, intended to serve as novel highly sensitive nanobiosensors.

International audience; In this paper, we investigate the effects of non-ideal clamping shapes on the dynamic behavior of silicon nanocantilevers. We fabricated silicon nanocantilevers using silicon on insulator (SOI) wafers by employing stepper ultraviolet (UV) lithography, which permits a resolution of under 100 nm. The nanocantilevers were driven by electrostatic force inside a scanning electron microscope (SEM). Both lateral and out-of-plane resonance frequencies were visually detected with the SEM. Next, we discuss overhanging of the cantilever support and curvature at the clamping point in the silicon nanocantilevers, which generally arises in the fabrication process. We found that the fundamental out-of-plane frequency of a realistically clamped cantilever is always lower than that for a perfectly clamped cantilever, and depends on the cantilever width and the geometry of the clamping point structure. Using simulation with the finite-elements method, we demonstrate that this discrepancy is attributed to the particular geometry of the clamping point (non-zero joining curvatures and a flexible overhanging) that is obtained in the fabrication process. The influence of the material orthotropy is also investigated and is shown to be negligible.