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Growth of TiO2 nanotubes on thin Ti film deposited on Si wafers with site-specific and patterned growth using a photolithography technique is demonstrated for the first time. Ti films were deposited via e-beam evaporation to a thickness of 350–1000 nm. The use of a fluorinated organic electrolyte at room temperature produced the growth of nanotubes with varying applied voltages of 10–60 V (DC) which remained stable after annealing at 500 °C. It was found that variation of the thickness of the deposited Ti film could be used to control the length of the nanotubes regardless of longer anodization time/voltage. Growth of the nanotubes on a SiO2 barrier layer over a Si wafer, along with site-specific and patterned growth, enables potential application of TiO2 nanotubes in NEMS/MEMS-type devices. [ABSTRACT FROM AUTHOR]