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Start Over Author "Nam-Joo Lee" Journal nanotechnology
3 results on '"Nam-Joo Lee"'

1. A study on the resistance switching of Ag

Author

Tae Sung, Lee, Nam Joo, Lee, Haider, Abbas, Quanli, Hu, Tae-Sik, Yoon, Hyun Ho, Lee, Ee, Le Shim, and Chi Jung, Kang

Abstract

The resistive random access memory (RRAM) devices with heterostuctures have been investigated due to cycling stability, nonlinear switching, complementary resistive switching and self-compliance. The heterostructured devices can modulate the resistive switching (RS) behavior appropriately by bilayer structure with a variety of materials. In this study, the bipolar resistive switching characteristics of the bilayer structures composed of Ta

Published
2017

2. A study on the resistance switching of Ag2Se and Ta2O5heterojunctions using structural engineering

Author

Quanli Hu, Nam Joo Lee, Hyun Ho Lee, Tae-Sik Yoon, Ee Le Shim, Tae Sung Lee, Chi Jung Kang, and Haider Abbas

Subjects
Materials science, Chalcogenide, Stacking, Bioengineering, 02 engineering and technology, 01 natural sciences, chemistry.chemical_compound, 0103 physical sciences, General Materials Science, Electrical and Electronic Engineering, Leakage (electronics), 010302 applied physics, business.industry, Mechanical Engineering, Bilayer, Heterojunction, General Chemistry, 021001 nanoscience & nanotechnology, Resistive random-access memory, chemistry, Mechanics of Materials, Electrode, Optoelectronics, 0210 nano-technology, business, Voltage
Abstract

The resistive random access memory (RRAM) devices with heterostuctures have been investigated due to cycling stability, nonlinear switching, complementary resistive switching and self-compliance. The heterostructured devices can modulate the resistive switching (RS) behavior appropriately by bilayer structure with a variety of materials. In this study, the bipolar resistive switching characteristics of the bilayer structures composed of Ta2O5 and Ag2Se, which are transition-metal oxide (TMO) and silver chalcogenide, were investigated. The bilayer devices of Ta2O5 deposited on Ag2Se (Ta2O5/Ag2Se) and Ag2Se deposited on Ta2O5 (Ag2Se/Ta2O5) were fabricated for investigation of the RS characteristics by stacking sequence of Ta2O5 and Ag2Se. All operating voltages were applied to the Ag top electrode with the Pt bottom electrode grounded. The Ta2O5/Ag2Se device showed that a negative voltage sweep switched the device from high resistance state (HRS) to low resistance state (LRS) and a positive voltage sweep switched the device from LRS to HRS. On the contrary, for the Ag2Se/Ta2O5 device a positive voltage sweep switched the device from HRS to LRS, and a negative voltage sweep switched it from LRS to HRS. The polarity dependence of RS was attributed to the stacking sequence of Ta2O5 and Ag2Se. In addition, the combined heterostructured device of both bilayer stacks, Ta2O5/Ag2Se and Ag2Se/Ta2O5, exhibited the complementary switching characteristics. By using threshold switching devices, sneak path leakage can be reduced without additional selectors. The bilayer heterostructures of Ta2O5 and Ag2Se have various advantages such as self-compliance, reproducibility and forming-free stable RS. It confirms the possible applications of TMO and silver chalcogenide heterostructures in RRAM.

Published
2017
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3. A study on the resistance switching of Ag2Se and Ta2O5 heterojunctions using structural engineering.

Author

Tae Sung Lee, Nam Joo Lee, Haider Abbas, Quanli Hu, Tae-Sik Yoon, Hyun Ho Lee, Ee Le Shim, and Chi Jung Kang

Subjects
*CHALCOGENIDES, *STRUCTURAL engineering, *NONVOLATILE random-access memory
Abstract

The resistive random access memory (RRAM) devices with heterostuctures have been investigated due to cycling stability, nonlinear switching, complementary resistive switching and self-compliance. The heterostructured devices can modulate the resistive switching (RS) behavior appropriately by bilayer structure with a variety of materials. In this study, the bipolar resistive switching characteristics of the bilayer structures composed of Ta2O5 and Ag2Se, which are transition-metal oxide (TMO) and silver chalcogenide, were investigated. The bilayer devices of Ta2O5 deposited on Ag2Se (Ta2O5/Ag2Se) and Ag2Se deposited on Ta2O5 (Ag2Se/Ta2O5) were fabricated for investigation of the RS characteristics by stacking sequence of Ta2O5 and Ag2Se. All operating voltages were applied to the Ag top electrode with the Pt bottom electrode grounded. The Ta2O5/Ag2Se device showed that a negative voltage sweep switched the device from high resistance state (HRS) to low resistance state (LRS) and a positive voltage sweep switched the device from LRS to HRS. On the contrary, for the Ag2Se/Ta2O5 device a positive voltage sweep switched the device from HRS to LRS, and a negative voltage sweep switched it from LRS to HRS. The polarity dependence of RS was attributed to the stacking sequence of Ta2O5 and Ag2Se. In addition, the combined heterostructured device of both bilayer stacks, Ta2O5/Ag2Se and Ag2Se/Ta2O5, exhibited the complementary switching characteristics. By using threshold switching devices, sneak path leakage can be reduced without additional selectors. The bilayer heterostructures of Ta2O5 and Ag2Se have various advantages such as self-compliance, reproducibility and forming-free stable RS. It confirms the possible applications of TMO and silver chalcogenide heterostructures in RRAM. [ABSTRACT FROM AUTHOR]

Published
2018
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