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Directed self-assembly of block copolymers and self-aligned double patterning are two commonly used pitch scaling techniques to increase the density of lithographic features. In this work, both of these pitch scaling techniques were combined, enabling patterning at even higher densities. In this process, directed self-assembly of a high-? block copolymer was used to form a line/space pattern, which served as a template for mandrels. Via these mandrels, atomic layer deposition was used to deposit a thin aluminium oxide spacer. By this method, a total pitch scaling factor of 8, equivalent to a 10.5 nm full pitch, was reached. The types of defects and the line roughness at the different steps of the process were discussed.

We report the formation of nanoimprint master templates that can be used for the fabrication of bit patterned media (BPM). The template was formed by directed self-assembly, with solvent annealing, of a symmetric ABA triblock copolymer to form perpendicularly oriented lamellae on chemical patterns. We used a high-χ block copolymer, poly(2-vinyl pyridine)-block-polystyrene-block-poly(2-vinyl pyridine) to achieve smaller feature sizes than are possible with polystyrene-block-poly(methyl methacrylate). The work shows that triblock copolymers can provide a large processing window in terms of pitch commensurability. Using block-selective infiltration (atomic layer deposition with sequential long soaking/purge cycles), an alumina composite with high etch resistance was specifically incorporated into the polar and hydrophilic P2VP domains. Subsequently, the surface pattern was successfully transferred into underlying Si substrates by etching with a fluorine-containing plasma to create a nanoimprint master. The line/space pattern of the nanoimprint master met the BPM fabrication requirement of defectivity

Full characterization of the three-dimensional structures resulting from the directed self-assembly (DSA) of block copolymers (BCP) remains a difficult challenge. Transmission electron microscope (TEM) tomography and resonant soft x-ray scattering have emerged as powerful and complementary methods for through-film characterization; both techniques require samples to be prepared on specialized membrane substrates. Here we report a generalizable process to implement BCP DSA with density multiplication on silicon nitride membranes. A key feature of the process developed here is that it does not introduce any artefacts or damage to the polymer assemblies as DSA is performed prior to back-etched membrane formation. Because most research and applications of BCP lithography are based on silicon substrates, process variations introduced by implementing DSA on a silicon nitride/silicon stack versus silicon were identified and mitigated. Using full-wafers, membranes were fabricated with different sizes and layouts to enable both TEM and x-ray characterization. Finally, both techniques were used to characterize structures resulting from the DSA of lamella-forming BCP with density multiplication.