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Two-dimensional (2D) materials and their heterostructures exhibit intriguing optoelectronic properties; thus, they are good platforms for exploring fundamental research and further facilitating real device applications. The key is to preserve the high quality and intrinsic properties of 2D materials and their heterojunction interface even in production scale during the transfer and assembly process so as to apply in semiconductor manufacturing field. In this study, we successfully adopted a wet transfer existing method to separate mediator-assisted wafer-scale from SiO2/Si growing wafer for the first time with intermediate annealing to fabricate wafer-scale MoS2/h-BN and WS2/h-BN heterostructures on a SiO2/Si wafer. Interestingly, the high-quality wafer-scale 2D material heterostructure optical properties were enhanced and confirmed by Raman and photoluminescence spectroscopy. Our approach can be applied to other 2D materials and expedite mass production for industrial applications.

The production of large-scale, single crystalline graphene is a requirement for enhancing its electronic, mechanical, and chemical properties. Chemical vapor deposition (CVD) has shown the potential to grow high quality graphene but the simultaneous nucleation of many grains limits their achievable domain size. We report here that ultralow nucleation densities can be achieved through multi-step optimization of the catalyst morphology. First, annealing in a hydrogen-free environment is required to retain a surface copper oxide which decreases the nucleation density. Second, CuO was found to be the relevant copper species for this process and air oxidation of the copper foil at 200 °C maximizes its concentration. Both pre-treatment steps were found to affect the morphology of the catalyst and a direct correlation between nucleation density and surface roughness was found which indicates that the primary role of the oxidation step is the decrease in catalyst roughness. To further enhance this determining parameter, confined CVD was carried out after sample oxidation and hydrogen-free annealing. Each of these three steps reduces the grain density by approximately one order of magnitude resulting in ultralow nucleation densities of 1.23 grains/mm(2) and high quality, single-crystalline graphene grains of several millimeter sizes were grown using this method.

The synthesis of graphene with controllable electronic and mechanical characteristics is of significant importance for its application in various fields ranging from drug delivery to energy storage. Electrochemical exfoliation of graphite has yielded graphene with widely varying behavior and could be a suitable approach. Currently, however the limited understanding of the exfoliation process obstructs targeted modification of graphene properties. We here investigate the process of electrochemical exfoliation and the impact of its parameters on the produced graphene. Using in situ optical and electrical measurements we determine that solvent intercalation is the required first step and the degree of intercalation controls the thickness of the exfoliated graphene. Electrochemical decomposition of water into gas bubbles causes the expansion of graphite and controls the functionalization and lateral size of the exfoliated graphene. Both process steps proceed at different time scales and can be individually addressed through application of pulsed voltages. The potential of the presented approach was demonstrated by improving the performance of graphene-based transparent conductors by 30times.

By using Au-nanorod (Au-NR) doped graphene as a transparent conducting electrode, Si-based metal-oxide-semiconductor (MOS) photodetectors (PDs) exhibit high external quantum efficiency (EQE) and fast response time. It is found that upon adding Au-NRs to the graphene, a significant increase in EQE is observed for both planar and Si-nanotip (Si-NT) MOS PDs. The planar Si-based MOS PDs reveal a notable photoresponse with an EQE of 49% at the peak wavelength of 530 nm under zero bias and an EQE of 66% at the peak wavelength of 600 nm under - 0.4 V bias. For the Si-NTs MOS PD, it exhibits a relatively high EQE of 71% under - 4 V bias due to the effect of light trapping arising from the nature of the Si-NT array.

In this work, electrostatic spray assisted chemical vapor deposition is used to directly deposit single-walled carbon nanotube (SWNT) thin films on a substrate. The catalyst solution was finely dispersed by a strong electrical field and injected into the heated reaction zone (950-1100 degrees C) during the growth. It was found that under optimized growth conditions, the deposited material consists of SWNTs while only small amounts of impurities are observed. The growth at different temperatures results in nanotubes of different length and morphology. The location at which the SWNTs deposit at the downstream end of the growth chamber is found to be affected by the nanotube length and the growth temperature, which can be understood by considering different forces acting on the floating aerosol particles inside the furnace. These results suggest a potential for in situ separation of the SWNTs by applying different forces to the floating SWNTs.

The enhancement of light extraction from Si(0.5)Ge(0.5)/Si multiple quantum wells (MQWs) with nanowall structures fabricated by electron cyclotron resonance (ECR) plasma etching is presented. It is shown that the ECR plasma treatment does not damage the crystalline quality. At a driving current of 5.5 × 10(6) A m(-2), the light output intensity of the MQWs with nanowall structures shows an enhancement of about 50% compared with that of the original MQWs. In addition to the enhanced light extraction, the improved optoelectronic properties are also attributed to the strain relaxation in nanowall structures.

Based on the enhanced electron–hole recombination rate generated by surface plasmon (SP) waves of Au nanoparticles (NPs) and electrons transferred from CdSe quantum dots (QDs) to Au NPs, we propose a mechanism to elucidate the luminescent behavior in Au and CdSe nanocomposites. With our proposed model, the enhancement of the spectrally integrated PL intensity can be manipulated by up to a factor of ~33, the largest value ever reported. Our study can be used to clarify the ambiguity in controlling the light emission enhancement and quenching of semiconductor nanocrystals coupled with the SP waves of metal NPs. It should be very useful for the creation of highly efficient solid-state emitters.