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In conventional ferromagnet/spacer/ferromagnet sandwiches, noncollinear couplings are commonly absent because of the low coupling energy and strong magnetization. For antiferromagnets (AFM), the small net moment can embody a low coupling energy as a sizable coupling field, however, such AFM sandwich structures have been scarcely explored. Here we demonstrate orthogonal interlayer coupling at room temperature in an all-antiferromagnetic junction Fe2O3/Cr2O3/Fe2O3, where the Néel vectors in the top and bottom Fe2O3 layers are strongly orthogonally coupled and the coupling strength is significantly affected by the thickness of the antiferromagnetic Cr2O3 spacer. From the energy and symmetry analysis, the direct coupling via uniform magnetic ordering in Cr2O3 spacer in our junction is excluded. The coupling is proposed to be mediated by the non-uniform domain wall state in the spacer. The strong long-range coupling in an antiferromagnetic junction provides an unexplored approach for designing antiferromagnetic structures and makes it a promising building block for antiferromagnetic devices.

The generation and manipulation of spin polarization at room temperature are essential for 2D van der Waals (vdW) materials-based spin-photonic and spintronic applications. However, most of the high degree polarization is achieved at cryogenic temperatures, where the spin-valley polarization lifetime is increased. Here, we report on room temperature high-spin polarization in 2D layers by reducing its carrier lifetime via the construction of vdW heterostructures. A near unity degree of polarization is observed in PbI2 layers with the formation of type-I and type-II band aligned vdW heterostructures with monolayer WS2 and WSe2. We demonstrate that the spin polarization is related to the carrier lifetime and can be manipulated by the layer thickness, temperature, and excitation wavelength. We further elucidate the carrier dynamics and measure the polarization lifetime in these heterostructures. Our work provides a promising approach to achieve room temperature high-spin polarizations, which contribute to spin-photonics applications., In two-dimensional semiconductors, light can generate spin polarisations, however this effect is typically limited to low temperatures. By combining Lead Iodide (PbI2) with transition metal dichalcogenides (TMDCs), the authors demonstrate room temperature light induced near-unity spin polarisations.

Natural killer/T cell lymphoma (NKTCL) is a rare and aggressive malignancy with a higher prevalence in Asia and South America. However, the molecular genetic mechanisms underlying NKTCL remain unclear. Here, we identify somatic mutations of GNAQ (encoding the T96S alteration of Gαq protein) in 8.7% (11/127) of NKTCL patients, through whole-exome/targeted deep sequencing. Using conditional knockout mice (Ncr1-Cre-Gnaqfl/fl), we demonstrate that Gαq deficiency leads to enhanced NK cell survival. We also find that Gαq suppresses tumor growth of NKTCL via inhibition of the AKT and MAPK signaling pathways. Moreover, the Gαq T96S mutant may act in a dominant negative manner to promote tumor growth in NKTCL. Clinically, patients with GNAQ T96S mutations have inferior survival. Taken together, we identify recurrent somatic GNAQ T96S mutations that may contribute to the pathogenesis of NKTCL. Our work thus has implications for refining our understanding of the genetic mechanisms of NKTCL and for the development of therapies., Natural killer/T cell lymphoma (NKTCL) is a rare and aggressive disease. Here, the authors identify recurrent somatic mutations of GNAQ in NKTCL, and model how this mutation contributes to NKTCL pathogenesis.