1. Design, fabrication and first beam tests of the C-band RF acceleration unit at SINAP.
- Author
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Fang, Wencheng, Gu, Qiang, Sheng, Xing, Wang, Chaopeng, Tong, Dechun, Chen, Lifang, Zhong, Shaopeng, Tan, Jianhao, Lin, Guoqiang, Chen, Zhihao, and Zhao, Zhentang
- Subjects
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FABRICATION (Manufacturing) , *PARTICLE acceleration , *KLYSTRONS , *COMPRESSORS ,DESIGN & construction - Abstract
C-band RF acceleration is a crucial technology for the compact Free Electron Laser (FEL) facility at the Shanghai Institute of Applied Physics (SINAP), Chinese Academy of Sciences. A project focusing on C-band RF acceleration technology was launched in 2008, based on high-gradient accelerating structures powered by klystron and pulse compressor units. The target accelerating gradient is 40 MV/m or higher. Recently one prototype of C-band RF unit, consisting of a 1.8 m accelerating structure and a klystron with a TE0115 mode pulse compressor, has been tested with high-power and electron beam. Stable operation at 40 MV/m was demonstrated and, 50 MV/m approached by the end of the test. This paper introduces the C-band R&D program at SINAP and presents the experiment results of high-power and beam tests. [ABSTRACT FROM AUTHOR]
- Published
- 2016
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