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This paper deals with the flash memory reliability in terms of the ionizing radiation effects. In fact, the reliability of flash memory depends on physico-chemical restrictions of electrostatic nature due to the effects of ionizing radiation. The presented results are actual as a high degree of integrated components miniaturization affects the memory sensitivity, while the role of memories in the solar cells management system for space flights is increasing, so that the effects of ionizing radiation may cause changes in the stored data or the physical destruction of the flash memory components. [Projekat Ministarstva nauke Republike Srbije, br.171007]

Positron emission tomography is a technology that provides unique and exquisite possibilities in functional diagnostics, in the sense that it is the most efficient and most reliable method for obtaining information about biochemical activity and cellular metabolism in the body, by determining exact localization and performing semi-quantitative assessment of the distribution of a radioactive tracer. This paper compares the characteristics of recently introduced lutetium based crystals to those of conventionally used bismuth-ortho-germanate scintillators; both options are used as scintillation detectors within the positron emission tomography systems. Energy resolution and scintillation decay time of lutetium based crystals and bis-muth-ortho-germanate crystals was experimentally tested. Main scintillation detector parameters which affect the resulting detector response are considered and analyzed, since they serve as the basis for a positron emission tomography medical image. [Projekat Ministarstva nauke Republike Srbije, br. 171007]

Monte Carlo simulations of proton irradiation on phase change memory cells were conducted and the proton dose, in both the whole memory cell and in its active layer, calculated. The memory cell was modeled by a multi-layer stack consisting of two TiW electrodes and ZnS-SiO2 films as insulators surrounding the active region. Materials considered for the active region were Ge2Sb2Te5, AgSbSe2, and Si2Sb2Te5. The effects of exposing phase change memory cells to proton beams were investigated for various thicknesses of phase change materials and different proton energies. Radiation-induced changes in the investigated memory cells are presented, including the accumulation of atomic displacements and the thermal heating of the active region. Possible effects of these changes on cell operation are discussed. [Projekat Ministarstva nauke Republike Srbije, br. 171007]

The Monte Carlo simulations of charged particle transport are used to investigate the effects of exposing ultra-thin layers of insulators (commonly used in integrated circuits) to beams of protons, alpha particles and heavy ions. Materials considered include silicon dioxide, aluminum nitride, alumina, and polycarbonate - lexan. The parameters that have been varied in simulations include the energy of incident charged particles and insulating layer thickness. Materials are compared according to both ionizing and non-ionizing effects produced by the passage of radiation. [Projekat Ministarstva nauke Republike Srbije, br. 171007]

Absorbed dose was estimated after Monte Carlo simulation of proton and ion beam irradiation on metal-oxide and metal-nonmetal memristors. A memristive device comprises two electrodes, each of a nanoscale width, and a double-layer active region disposed between and in electrical contact with electrodes. Following materials were considered for the active region: titanium dioxide, zirconium dioxide, hafnium dioxide, strontium titanium trioxide and galium nitride. Obtained results show that significant amount of oxygen ion - oxygen and nonmetal ion - nonmetal vacancy pairs is to be generated. The loss of such vacancies from the device is believed to deteriorate the device performance over time. Estimated absorbed dose values in the memristor for different constituting materials are of the same order of magnitude because of the close values of treshold displacement energies for the investigated materials.

This paper investigates the stabilization of electrical discharges in gases by means of external ionizing radiation. Discharges in a gas-filled surge arrester model were studied in both passive and active regimes of the device. An originally developed model of the gas-filled surge arrester was used. Gas pressure and the interelectrode gap were the variable parameters in our measurements. Applied radiation types included α-particles, γ-rays, X-rays, and neutrons. Measurements were performed under highly controlled laboratory conditions. The combined measurement uncertainty of the applied procedure was estimated as being under the 5% level. The results obtained are followed by a theoretical explanation. The crucial result is the conclusion that ionizing radiation does not necessarily degrade the gas-filled surge arrester’s functionality but that it, rather, improves it under certain conditions.

This paper investigates possible radiation effects in the Cooper-pair insulator state of indium oxide films. Radiation effects are predicted on the basis of Monte Carlo simulations. Results of a combined theoretical and numerical analysis suggest that radiation-induced changes in the investigated films could significantly affect their current-voltage characteristics, and that a transition to a metallic state is possible, due to radiation-induced disruption of the fine-tuned granular structure. Dissociation of Cooper pairs, caused by both the incident radiation and the ions displaced within InOx films, can also destroy the conditions for this specific insulating state to subsist.

This paper investigates possible effects of alpha particle and ion beam irradiation on the properties of the superinsulating phase, recently observed in titanium nitride films, by using numerical simulation of particle transport. Unique physical properties of the superinsulating state are considered by relying on a two-dimensional Josephson junction array as a model of material structure. It is suggested that radiation-induced change of the Josephson junction charging energy would not affect the current-voltage characteristics of the superinsulating film significantly. However, it is theorized that a relapse to an insulating state with thermally activated resistance is possible, due to radiation-induced disruption of the fine-tuned granular structure. The breaking of Cooper pairs caused by incident and displaced ions may also destroy the conditions for a superinsulating phase to exist. Finally, even the energy loss to phonons can influence the superinsulating state, by increasing the effective temperature of the phonon thermostat, thereby reestablishing means for an energy exchange that can support Cooper pair tunneling.

The wide substitution of conventional types of energy by solar energy lies in the rate of developing solar cell technology. Silicon is still the mostly used element for solar cell production, so efforts are directed to the improvement of physical properties of silicon structures. There are several trends in the development of solar cells, but mainly two directions are indicated: the improvement of the conventional solar cell characteristics based on semiconductor materials, and exploring the possibilities of using some new materials. The aim of this paper is to present some different approaches of improvement of solar cell properties through the investigation of radiation effects on the main solar cell characteristics.

We propose a new method for constructing a mathematical model of a non-linear system in an auto-oscillation regime. The method is based on the divergence of a vector field having a constant value along the corresponding periodical motion. The variants of the obtained model could be used for describing nuclear processes that are represented by the systems of differential equations analogous to that of the presented model.

The effects of exposing titanium dioxide memristors to ion beams are investigated through Monte Carlo simulation of particle transport. A model assuming ohmic electronic conduction and linear ionic drift in the memristor is utilized. The memristor is composed of a double-layer titanium dioxide thin film between two platinum electrodes. Obtained results suggest that a significant generation of oxygen ion/oxygen vacancy pairs in the oxide is to be expected along ion tracks. These can influence the device’s operation by lowering the resistance of the stoichiometric oxide region and the mobility of the vacancies. Changes induced by ion irradiation affect the current-voltage characteristic and state retention ability of the memristor. If the displaced oxygen ions reach the platinum electrodes, they can form the O2 gas and cause a permanent disruption of memristor functionality.

GM counters are often used in radiation detection since they generate a strong signal which can be easily detected. The working principal of a GM counter is based on the interaction of ionizing radiation with the atoms and molecules of the gas present in the counter's tube. Free electrons created as a result of this interaction become initial electrons, i. e. start an avalanche process which is detected as a pulse of current. This current pulse is independent of the energy imparted on the gas, that being the main difference between a GM counter and the majority of other radiation detectors. In literature, the dependence on the incidence of radiation energy, tube's orientation and characteristics of the reading system are quoted as the main sources of measurement uncertainty of GM counters. The aim of this paper is to determine the dependence of measurement uncertainty of a GM counter on the volume of its counter's tube. The dependence of the pulse current on the size of the counter's tube has, therefore, been considered here, both in radial and parallel geometry. The initiation and expansion of the current pulse have been examined by means of elementary processes of electrical discharge such as the Markov processes, while the changes in the counter's tube volume were put to test by the space - time enlargement law. The random variable known as the 'current pulse in the counter's tube' (i. e. electrical breakdown of the electrode configuration) has also been taken into account and an appropriate theoretical distribution statistically determined. Thus obtained theoretical results were then compared to corresponding experimental results established in controlled laboratory conditions.

This paper compares the reliability of standard commercial Erasable Programmable Read Only Memory (EPROM) and Electrically Erasable Programmable Read Only Memory (E2PROM) components exposed to gamma rays. The results obtained for CMOS-based EPROM (NM27C010) and E2PROM (NM93CS46) components provide the evidence that EPROMs have greater radiation hardness than E2PROMs. Moreover, the changes in EPROMs are reversible, and after erasure and reprogramming all EPROM components restore their functionality. On the other hand, changes in E2PROMs are irreversible. The obtained results are analyzed and interpreted on the basis of gamma ray interaction with the CMOS structure.

The wide-spread use of semiconductor and gas-filled diodes for non-linear over-voltage protection results in a variety of possible working conditions. It is therefore essential to have a thorough insight into their reliability in exploitation environments which imply exposure to ionizing radiation. The aim of this paper is to investigate the influence of irradiation on over-voltage diode characteristics by exposing the diodes to californium-252 combined neutron/gamma radiation field. The irradiation of semiconductor over-voltage diodes causes severe degradation of their protection characteristics. On the other hand, gas-filled over-voltage diodes exhibit a temporal improvement of performance. The results are presented with the accompanying theoretical interpretations of the observed changes in over-voltage diode behaviour, based on the interaction of radiation with materials constituting the diodes.

The aim of this paper is to examine the influence of neutron and gamma irradiation on the dissipation factor and capacitance of capacitors with polycarbonate dielectrics. The operation of capacitors subject to extreme conditions, such as the presence of ionizing radiation fields, is of special concern in military industry and space technology. Results obtained show that the exposure to a mixed neutron and gamma radiation field causes a decrease of capacitance, while the loss tangent remains unchanged.

This paper discusses the influence of radiation energy and angle of incidence as possible sources of uncertainties in measurements performed by GM counters. Based on the detection efficiency of GM counters, it has been concluded that the energy of incident radiation does not contribute to the overall uncertainty. The angle of incident radiation does contribute to overall uncertainty, but only in the case of gamma radiation detection. In that case, the uncertainty should be determined by using geometrical probability.