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Titanium dioxide thin films have been deposited on silicon wafers substrates by an atomic layer deposition (ALD) method. There optical parameters were investigated by spectroscopic ellipsometry and UV/VIS spectroscopy. A material with a refractive index of 2.41 was obtained. Additionally, in a wide spectral range it was possible to reduce the reflection from the silicon surface below 5%. The Raman spectroscopy method was used for structural characterization of anatase TiO2 thin films. Their uniformity and chemical composition are confirmed by a scanning electron microscope (SEM) energy dispersive spectrometer (EDS). [ABSTRACT FROM AUTHOR]

This paper presents some results of investigations on aluminum oxide Al2O3 thin films prepared by the atomic layer deposition method on polished monocrystalline silicon. It has been described how the technological parameters of the deposition process, like the number of cycles and substrate temperature, influenced the optical properties and morphology of prepared thin films. Their physical and optical properties like thickness, uniformity and refractive index have been investigated with spectroscopic ellipsometry, atomic force microscopy and UV/vis optical spectroscopy. [ABSTRACT FROM AUTHOR]