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Different laser damage testing protocols, including 1-on-1, S-on-1, and Raster Scan, were conducted on 532 nm polarizers to evaluate the damage resistance and mechanisms. A comparison of the laser-induced damage thresholds (LIDTs) revealed different damage characteristics and major contributions to film failure for different polarizations. For P polarization, the LIDTs for the three test protocols were nearly the same because of the stabilization of two typical damage morphologies of flat-bottomed pits and mussel damage pits. For S polarization, the LIDTs for multiple pulses were lowest, where absorptive defect-induced damage was revealed. The damage characteristics of 532 nm polarizers and 1064 nm polarizers have been also compared. The mussel damage pits, which are similar to the typical damage morphologies of ultraviolet (UV) laser damage to fused silica, were observed for the first time in coatings of 532 nm polarizers. This suggests that, the polishing-induced subsurface damage of fused silica substrates may tend to be excited by a short-wavelength laser rather than the fundamental wavelength. • The damage resistance and damage characteristics of 532 nm polarizers in different laser damage test protocols, including 1-on-1, S-on-1, and Raster Scan, have been summarized, as a reference for thin-film optics in high-power laser applications. • The damage characteristics of 532 nm polarizers and 1064 nm polarizers were compared. The subsurface damage of fused silica substrates is easily excited by short-wavelength lasers. • Mussel pits, associated with the ultraviolet laser damage of fused silica, were observed in the coatings for the first time. [ABSTRACT FROM AUTHOR]

Antireflection (AR) coatings are deposited on UV grade fused silica substrates, which are cleaned in the dual ion beam sputtering device. Compared to ultrasonic and acid etching cleaning progress, ion beam etching improves the laser-induced damage threshold (LIDT) of substrates and AR coatings significantly at 355 nm. Ion beam etching declines the low LIDT defects drastically and removes lots of the impurity elements (Ce, Fe, K, and Na). Roughness test shows that the AR coatings and substrates with ion beam etching are very flat and of low roughness. Ion beam etching reduces the density of deep defect from substrates greatly. Damage morphologies show double layers delamination, which is explained via calculation of layer stress. This study will be helpful for preparation of high LIDT optical coatings. • The LIDT of the 355 nm AR coatings and substrates are improved greatly with ion beam etching of substrates. • The damage curves show that ion beam etching declined the low LIDT defects drastically. • The impurity elements (Ce, Fe, K, and Na) are removed efficiently, and the surfaces are quite smooth. • Damage morphologies show two different defects in AR coatings and correspond to the laser damage curves. • Laser damage mechanism of AR coatings is explained. [ABSTRACT FROM AUTHOR]

The bandwidth and laser induced damage threshold (LIDT) are the key factors influencing the performance of broadband antireflection (AR) films in optical systems. In this study, we used glancing angle deposition (GLAD) technology to prepare an "interface free" ultrabroadband AR film with continuously varying refractive index and a nanorod structure. Owing to the changing refractive index from substrate to air, the average residual reflectivity of our AR films in the transmission band of 200–2500 nm of the entire fused quartz substrate is less than 0.55%, which is far superior to the traditional broadband AR film. Further, owing to removal of the interface and nanorod structure, the LIDTs of the ultrabroadband AR film at 1064 and 532 nm are 22.5 and 22.6 J/cm2, respectively. These are approximately 50% and 20% higher than those of the traditional 532 and 1064 nm AR film, respectively, indicating superior laser damage resistance. [Display omitted] • Ultrabroadband AR film design is proposed with continuous varying refractive index. • The interior of the film presents an"interface free" state and nanorods structure. • The average residual reflectivity of AR film is less than 0.55% in the 200–2500 nm. • The AR film exhibited superior laser damage resistance than traditional AR films. [ABSTRACT FROM AUTHOR]

The high optical performance and laser-induced damage threshold (LIDT) of broadband hafnium oxide/silica (HfO 2 /SiO 2) dichroic coatings with high transmittance and reflectance around 532 and 1064 nm, respectively, are essential for the efficiency of a harmonic separation system. However, the transmittance of dichroic coatings tends to drop rapidly at 532 nm because of the half-wave hole effect. Moreover, an intense electric field penetrates the coating (~6 μm thick) to the substrate, thereby generating a challenge to improve the LIDT at 532 nm. In this paper, we study the methods to improve the optical performance and LIDT of HfO 2 /SiO 2 dichroic coatings prepared by electron-beam evaporation. The inhomogeneity in the growth characteristics of the HfO 2 layer is studied and considered in the design of dichroic coatings, which can improve spectral performance, especially by broadening the transmittance bandwidth around 532 nm. Additionally, the effects of the different treatment procedures, including ultrasonic cleaning, acid-solution etching, and argon-ion-beam etching, of the fused silica substrate on the LIDT of dichroic coatings are investigated by the raster-scan damage test method. We observe that the LIDT of dichroic coatings at 532 nm is limited by the surface and subsurface defects of the substrate. Etching ~200 nm of the surface of the fused silica substrate can effectively inhibit the occurrence of low-energy catastrophic growth damage. Compared with acid-solution etching, argon-ion-beam etching can yield improved substrate surface quality and increased LIDTs of dichroic coatings at 532 nm. • The refractive index inhomogeneity of the HfO 2 single layer is consistent with that of the HfO 2 layer in dichroic coatings. • HfO 2 /SiO 2 dichroic coatings considering the refractive-index inhomogeneity of HfO 2 layer inhibit the half-wave hole effect. • Laser damage at 532 nm mainly originates from the substrate subsurface defects in the redeposition (Beilby) layer. • Argon-ion-beam etching can bring better substrate surface quality and higher LIDTs of dichroic coatings at 532 nm. [ABSTRACT FROM AUTHOR]