1. Optical study of ion-induced effects in Ge20Se80−xBix thin films
- Author
-
Sharma, P., Vashistha, M., and Jain, I.P.
- Subjects
- *
THIN films , *SOLID state electronics , *SURFACES (Technology) , *SPECTRUM analysis - Abstract
Abstract: Incorporation of impurities into the semiconductors by high energy heavy ions is a non-equilibrium process, which can result in intriguing near surface or subsurface property changes depending upon the energy of the ion. Present work deals with the optical study of Ni ion irradiated Ge20Se80−xBix thin films samples. The thin film samples were deposited by the flash evaporation method at 10−5Torr and were characterized by XRD, XRF, EPMA and DSC. Irradiation was done on samples with a Ni ion beam of 75MeV energy. The optical spectra of the films were recorded and the optical band gap study was done both as a function of dose (5×1012 to 1014 ions/cm2) as well as composition of the samples. The optical band gap was found to decrease with increasing Bi content as well as with increasing dose. [Copyright &y& Elsevier]
- Published
- 2004
- Full Text
- View/download PDF