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• The lattice matching condition determination in order to obtain stable structure. • Physical and optical parameters determination at room temperature. • Emphasizing the impact of the absorption coefficient on the frequency response. • Frequency response optimization of the new pin photodiode structure. • Managing the frequency response limitations through the transparent layers. • Total frequency response calculation and highlighting its limitations. This paper reports on pin photodiode frequency response optimization based on In x Ga 1-x As 1-y N y quaternary lattice matched to GaAs. Two transparent layers are placed on p-side and n-side in order to manage the photodiode frequency response limitations. The lattice matching condition is calculated in order to obtain stable structure. The physical and optical parameters calculations are performed at room temperature showing the impact of nitrogen on the absorption coefficient. A stable structure, having 2 % of nitrogen and 6% of indium, allows to achieve a cutoff frequency of about 116 GHz and a capacitance of 5.21fF while the quantum efficiency is 41.59% for a depletion region thickness of about 0.55 µm. However, in case of depletion region thickness of about 0.625 µm, the cutoff frequency degrades to 98 GHz while the capacitance diminishes to 4.58fF and the quantum efficiency increases to 51.56%. In addition, a comparative study with literature results has been carried out in order to show the advantages of the proposed photodiode. This comparison affirms that the proposed photodiode based on InGaAsN lattice matched to GaAs exhibits high-speed photo-detection. This work allowed us to obtain a p-i-n photodiode with stable structure suitable for photo-detection at 1.15 µm. [ABSTRACT FROM AUTHOR]