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• Polarization beam splitter based on LNOI triple-waveguide coupler is proposed. • α-Si nanostrip is used to manipulate the coupling of TM polarization mode. • Higher polarization extinction ratio and lower insertion loss are achieved. • The device is compact and suitable for on-chip applications. • A larger feature size (∼200 nm) that facilitates fabrication is involved. Polarization beam splitter (PBS) is a fundamental component of integrated photonics to manipulate wave polarization state, and most PBS devices were designed on the popular SOI. As an alternative, a PBS may be implemented on the basis of thin-film LiNbO 3 -on-insulator (LNOI), a promising platform for developing various compact or ultra-compact photonic active and passive devices. However, smaller modal birefringence of the LNOI waveguide makes it not easy to implement a PBS of high-performance. Here, we propose a compact, high-performance PBS on the basis of a triple-waveguide coupler consisted of two LNOI ridge waveguides and an amorphous silicon (α-Si) nanostrip assisted waveguide. By making use of the α-Si nanostrip, the PBS works in the case that the TM polarization mode meets the phase matching condition while the TE polarization mode does not. Numerical results show that the PBS is compact with a length of only 31 μm. The device can achieve an ultra-high polarization extinction ratio (>29.4 dB) and an ultra-low insertion loss (<0.066 dB) in the operating wavelength range of 1500–1600 nm for the TE polarization mode, and a polarization extinction ratio of > 20 dB and an insertion loss of < 0.16 dB over a ∼ 60 nm bandwidth from 1527 nm to 1587 nm for the TM polarization mode. Moreover, the device has a larger feature size that facilitates fabrication. Overall, this device has the advantages of compact size, higher polarization extinction ratio, lower insertion loss, and larger feature size, which is suitable for on-chip applications. [ABSTRACT FROM AUTHOR]

Clamped and unclamped electro-optic coefficients γ 13 and γ 33 of In 3+ /Er 3+ -codoped LiNbO 3 crystals, which were grown by Czochralski method from the melts containing 0.5 mol% Er 2 O 3 while varied In 2 O 3 contents of 0.0, 0.5, 1.0 and 1.5 mol%, were measured by Mach-Zehnder interferometry. The results show that In 3+ /Er 3+ codoping does not cause change of γ 13 and γ 33 , and both γ 13 and γ 33 can be regarded as unchanged in the studied In 3+ concentration range of 0–2.6 mol% (in crystal) within the experimental error of 3%. The small doping effect is desired in light of the electro-optic application of the crystal. A qualitative, comprehensible explanation for the small effect is given on the basis of the EO coefficient model of LiNbO 3 and doping effect on the defect structure of LiNbO 3 . [ABSTRACT FROM AUTHOR]

Highlights • A mistake in previous paper Opt. Laser Technol. 88 (2017) 152–156] is corrected. • γ 33 and γ 13 were measured by two voltage-applying schemes: Schemes One and Two. • In the Scheme Two, a DC voltage is applied via Al films on crystal surfaces. • γ 33 and γ 13 measured by the Scheme Two are unclamped instead of clamped. Abstract We correct a mistake in the previous paper "Electro-optic properties of indium/erbium-codoped lithium niobate crystal for integrated optics" [Opt. Laser Technol. 88 (2017) 152–156]. The electro-optic coefficients γ 33 and γ 13 that were measured by applying a DC voltage to the crystal via the Al films coated onto the crystal surfaces are the unclamped instead of clamped coefficients. [ABSTRACT FROM AUTHOR]