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We report on LinoSPAD2, a single-photon camera system, comprising a 512×1 single-photon avalanche diode (SPAD) front-end and one or two FPGA-based back-ends. Digital signals generated by the SPADs are processed by the FPGA in real time, whereas the FPGA offers full reconfigurability at a very high level of granularity both in time and space domains. The LinoSPAD2 camera system can process 512 SPADs simultaneously through 256 channels, duplicated on each FPGA-based back-end, with a bank of 64 time-to-digital converters (TDCs) operating at 133 MSa/s, whereas each TDC has a time resolution of 20 ps (LSB). To the best of our knowledge, LinoSPAD2 is the first fully reconfigurable SPAD camera system of large format. The SPAD front-end features a pitch of 26.2 μm, a native fill factor of 25.1%, and a microlens array achieving 2.3× concentration factor. At room temperature, the median dark count rate (DCR) is 80 cps at 7 V excess bias, the peak photon detection probability (PDP) is 53% at 520 nm wavelength, and the single-photon timing resolution (SPTR) is 50 ps FWHM. The instrument response function (IRF) is around 100 ps FWHM at system level. The LinoSPAD2 camera system is suitable for numerous applications, including LiDAR imaging, heralded spectroscopy, compressive Raman sensing, and other computational imaging techniques.

The overall sensitivity of frontside-illuminated, silicon single-photon avalanche diode (SPAD) arrays has often suffered from fill factor limitations. The fill factor loss can however be recovered by employing microlenses, whereby the challenges specific to SPAD arrays are represented by large pixel pitch (> 10 µm), low native fill factor (as low as ∼10%), and large size (up to 10 mm). In this work we report on the implementation of refractive microlenses by means of photoresist masters, used to fabricate molds for imprints of UV curable hybrid polymers deposited on SPAD arrays. Replications were successfully carried out for the first time, to the best of our knowledge, at wafer reticle level on different designs in the same technology and on single large SPAD arrays with very thin residual layers (∼10 µm), as needed for better efficiency at higher numerical aperture (NA > 0.25). In general, concentration factors within 15-20% of the simulation results were obtained for the smaller arrays (32×32 and 512×1), achieving for example an effective fill factor of 75.6-83.2% for a 28.5 µm pixel pitch with a native fill factor of 28%. A concentration factor up to 4.2 was measured on large 512×512 arrays with a pixel pitch of 16.38 µm and a native fill factor of 10.5%, whereas improved simulation tools could give a better estimate of the actual concentration factor. Spectral measurements were also carried out, resulting in good and uniform transmission in the visible and NIR.

This paper presents a single-photon avalanche diode (SPAD) in 55 nm bipolar-CMOS-DMOS (BCD) technology. In order to realize a SPAD having sub-20 V breakdown voltage for mobile applications while preventing high tunneling noise, a high-voltage N-well available in BCD is utilized to implement the avalanche multiplication region. The resulting SPAD has a breakdown voltage of 18.4 V while achieving an excellent dark count rate of 4.4 cps/µm 2 at the excess bias voltage of 7 V in spite of the advanced technology node. At the same time, the device achieves a high peak photon detection probability (PDP) of 70.1% at 450 nm thanks to the high and uniform E-field. Its PDP values at 850 and 940 nm, wavelengths of interest for 3D ranging applications reach 7.2 and 3.1%, respectively, with the use of deep N-well. The timing jitter of the SPAD, full width at half maximum (FWHM), is 91 ps at 850 nm. It is expected that the presented SPAD enables cost-effective time-of-flight and LiDAR sensors with the advanced standard technology for many mobile applications.

Single-photon avalanche diode (SPAD) arrays can be used for single-molecule localization microscopy (SMLM) because of their high frame rate and lack of readout noise. SPAD arrays have a binary frame output, which means photon arrivals should be described as a binomial process rather than a Poissonian process. Consequentially, the theoretical minimum uncertainty of the localizations is not accurately predicted by the Poissonian Cramér-Rao lower bound (CRLB). Here, we derive a binomial CRLB and benchmark it using simulated and experimental data. We show that if the expected photon count is larger than one for all pixels within one standard deviation of a Gaussian point spread function, the binomial CRLB gives a 46% higher theoretical uncertainty than the Poissonian CRLB. For typical SMLM photon fluxes, where no saturation occurs, the binomial CRLB predicts the same uncertainty as the Poissonian CRLB. Therefore, the binomial CRLB can be used to predict and benchmark localization uncertainty for SMLM with SPAD arrays for all practical emitter intensities.

Temporal photon correlation measurement, instrumental to probing the quantum properties of light, typically requires multiple single photon detectors. Progress in single photon avalanche diode (SPAD) array technology highlights their potential as high-performance detector arrays for quantum imaging and photon number-resolving (PNR) experiments. Here, we demonstrate this potential by incorporating a novel on-chip SPAD array with 42% peak photon detection efficiency, low dark count rate and crosstalk probability of 0.14% per detection in a confocal microscope. This enables reliable measurements of second and third order photon correlations from a single quantum dot emitter. Our analysis overcomes the inter-detector optical crosstalk background even though it is over an order of magnitude larger than our faint signal. To showcase the vast application space of such an approach, we implement a recently introduced super-resolution imaging method, quantum image scanning microscopy (Q-ISM).

Confocal microscopes use photomultiplier tubes and hybrid detectors due to their large dynamic range, which typically exceeds the one of single-photon avalanche diodes (SPADs). The latter, due to their photon counting operation, are usually limited to an output count rate to 1/Tdead. In this paper, we present a thorough analysis, which can actually be applied to any photon counting detector, on how to extend the SPAD dynamic range by exploiting the nonlinear photon response at high count rates and for different recharge mechanisms. We applied passive, active event-driven and clock-driven (i.e. clocked, following quanta image sensor response) recharge directly to the SPADs. The photon response, photon count standard deviation, signal-to-noise ratio and dynamic range were measured and compared to models. Measurements were performed with a CMOS SPAD array targeted for image scanning microscopy, featuring best-in-class 11 V excess bias, 55% peak photon detection probability at 520 nm and >40% from 440 to 640 nm. The array features an extremely low median dark count rate below 0.05 cps/μm 2 at 9 V of excess bias and 0°C. We show that active event-driven recharge provides ×75 dynamic range extension and offers novel ways for high dynamic range imaging. When compared to the clock-driven recharge and the quanta image sensor approach, the dynamic range is extended by a factor of ×12.7-26.4. Additionally, for the first time, we evaluate the influence of clock-driven recharge on the SPAD afterpulsing.

We present the architecture and three applications of the largest resolution image sensor based on single-photon avalanche diodes (SPADs) published to date. The sensor, fabricated in a high-voltage CMOS process, has a resolution of 512 × 128 pixels and a pitch of 24 μm. The fill-factor of 5% can be increased to 30% with the use of microlenses. For precise control of the exposure and for time-resolved imaging, we use fast global gating signals to define exposure windows as small as 4 ns. The uniformity of the gate edges location is ∼140 ps (FWHM) over the whole array, while in-pixel digital counting enables frame rates as high as 156 kfps. Currently, our camera is used as a highly sensitive sensor with high temporal resolution, for applications ranging from fluorescence lifetime measurements to fluorescence correlation spectroscopy and generation of true random numbers.