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Lead halide perovskites are a promising class of materials for solar cell applications. The perovskite bandgap depends on the material composition and is highly tunable. Opto-electrical device modelling is commonly used to find the optimum perovskite bandgap that maximizes device efficiency or energy yield, either in single junction or multi-junction configuration. The first step in this calculation is the optical modelling of the spectral absorptance. This requires as input the perovskite's complex refractive index N as a function of wavelength λ. The complex refractive index consists of real part n(λ) and imaginary part k(λ). For the most commonly used perovskites, n and k curves are available from spectroscopic ellipsometry measurements, but usually only for a few discrete bandgap energies. For solar cell optimization, these curves are required for a continuous range of bandgap energies. We introduce new methods for generating the n and k curves for an arbitrary bandgap, based on interpolating measured complex refractive index data. First, different dispersion models (Cody-Lorentz, Ullrich-Lorentz and Forouhi-Bloomer) are used to fit the measured data. Then, a linear regression is applied to the fit parameters with respect to the bandgap energy. From the interpolated parameters, the refractive index curve of perovskite with any desired bandgap energy is finally reconstructed. To validate our method, we compare our results with methods from literature and then use it to simulate the absorptance of a single junction perovskite and a perovskite/silicon tandem cell. This shows that our method based on the Forouhi-Bloomer model is more accurate than existing methods in predicting the complex refractive index of perovskite for arbitrary bandgaps.

A 3-D optical modelling was calibrated to calculate the light absorption and the total reflection of fabricated CIGS solar cells. Absorption losses at molybdenum (Mo) / CIGS interface were explained in terms of plasmonic waves. To quench these losses, we assumed the insertion of a lossless dielectric spacer between Mo and CIGS, whose optical properties were varied. We show that such a spacer with low refractive index and proper thickness can significantly reduce absorption in Mo in the long wavelength regime and improve the device's rear reflectance, thus leading to enhanced light absorption in the CIGS layer. Therefore, we optimized a realistic two-layer MgF 2 / Al 2 O 3 dielectric spacer to exploit (i) the passivation properties of ultra-thin Al 2 O 3 on the CIGS side for potential high open-circuit voltage and (ii) the low refractive index of MgF 2 on the Mo side to reduce its optical losses. Combining our realistic spacer with optically-optimized point contacts increases the implied photocurrent density of a 750 nm-thick CIGS layer by 10% for the wavelengths between 700 and 1150 nm with respect to the reference cell. The elimination of plasmonic resonances in the new structure leads to a higher electric field magnitude at the bottom of CIGS layer and justifies the improved optical performance.

We present the optical investigation of a novel back-contacted architecture for solar cells based on a thin barium (di)silicide (BaSi 2 ) absorber. First, through the analysis of absorption limits of different semiconducting materials, we show the potential of BaSi 2 for photovoltaic applications. Then, the proposed back contacted BaSi 2 solar cell design is investigated and optimized. An implied photocurrent density of 40.3 mA/cm 2 in a 1-μm thick absorber was achieved, paving the way for novel BaSi 2 -based thin-film solar cells.

We have used 3-D optical modelling to investigate light management concepts based on periodic textures and material optimization for photovoltaic devices based on Cu(In,Ga)Se 2 (CIGS) absorber material. At first, calibration of the software based on the characterization of a reference (1500-nm thick) CIGS device was carried out. The effects of 1-D and 2-D symmetric gratings on the cell were then investigated, showing significant improvement in anti-reflection effect and in absorptance in the active layer, achieved by excitation of guided modes in the absorber. In addition, device configurations endowed with alternative back reflector and front transparent conductive oxide (TCO) were tested with the goal to quench parasitic absorption losses at front and back side. The use of In 2 O 3 :H (IOH) as front and back TCO, combined with an optimized 2-D grating structure, led to a 25% increase of the optical performance with respect to an equally-thick flat device. Most of the performance increase was kept when the absorber thickness was reduced from 1500 nm to 600 nm.