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We present a simple to process tunable laser, fabricated in a low-cost generic fabrication process and based on two coupled Fabry-Perot cavities. The complex coupling coe cients of the coupling element are analytically derived from a 3x3 MMI using coupled mode theory and chosen to maximize the SMSR during lasing operation. Additionally, one of the cavities contains a reflective interferometer, which acts as coarse wavelength selector. This interferometer is derived from a Michelson Interferometer, by replacing the two independent mirrors with our optimized coupling element, leading to a doubled Free Spectral Range. As a result, we obtained a tuning range of 26 nm with potential for beyond 40 nm, a SMSR larger than 40 dB and fiber coupled power up to 9 dBm.

In this paper, we present the detailed characterization of a semiconductor ring passively mode-locked laser with a 20 GHz repetition rate that was realized as an indium phosphide based photonic integrated circuit (PIC). Various dynamical regimes as a function of operating conditions were explored in the spectral and time domain. A record bandwidth of the optical coherent comb from a quantum well based device of 11.5 nm at 3 dB and sub-picosecond pulse generation is demonstrated.

We experimentally study surface plasmon lasing in a series of metal hole arrays on a gold-semiconductor interface. The sub-wavelength holes are arranged in square arrays of which we systematically vary the lattice constant and hole size. The semiconductor medium is optically pumped and operates at telecom wavelengths (λ ~ 1.5 μm). For all 9 studied arrays, we observe surface plasmon (SP) lasing close to normal incidence, where different lasers operate in different plasmonic bands and at different wavelengths. Angle- and frequency-resolved measurements of the spontaneous emission visualizes these bands over the relevant (ω, k||) range. The observed bands are accurately described by a simple coupled-wave model, which enables us to quantify the backwards and right-angle scattering of SPs at the holes in the metal film.

Metallic-Cavity lasers or plasmonic nanolasers of sub-wavelength sizes have attracted great attentions in recent years, with the ultimate goal of achieving continuous wave (CW), room temperature (RT) operation under electrical injection. Despite great efforts, a conclusive and convincing demonstration of this goal has proven challenging. By overcoming several fabrication challenges imposed by the stringent requirement of such small scale devices, we were finally able to achieve this ultimate goal. Our metallic nanolaser with a cavity volume of 0.67{\lambda}3 ({\lambda}=1591 nm) shows a linewidth of 0.5 nm at RT, which corresponds to a Q-value of 3182 compared to 235 of the cavity Q, the highest Q under lasing condition for RT CW operation of any sub-wavelength laser. Such record performance provides convincing evidences of the feasibility of RT CW metallic nanolasers, thus opening a wide range of practical possibilities of novel nanophotonic devices based on metal-semiconductor structures., Comment: This paper has been withdrawn by the author after the final publication in Optics Express, 21, 4728(2013)

A method to avoid the stiction failure in nano-electro-opto-mechanical systems has been demonstrated by coating the system with an anti-stiction layer of Al2O3 grown by atomic layer deposition techniques. The device based on a double-membrane photonic crystal cavity can be reversibly operated from the pull-in back to its release status. This enables to electrically switch the wavelength of a mode over ~50 nm with a potential modulation frequency above 2 MHz. These results pave the way to reliable nano-mechanical sensors and optical switches.

The use of the postprocessing method consisting of bitwise Exclusive-OR and least significant bits extraction to generate random bit sequences typically requires two distinct chaotic outputs. While the two signals are, in general, generated using two separated devices, e.g. two Fabry-Perot lasers, a single semiconductor ring laser can be used as an alternative due to its circular symmetry which facilitates lasing in two counterpropagating mode directions. We consider a chaotic semiconductor ring laser and investigate both numerically and experimentally its char- acteristics for fast random bit generation. In particular, we show that by sampling each directional mode's output signal using a 8-bit analog-digital converter and through Exclusive-OR operation applied to the two resulting signals (after throwing away 4 most significant bits), we can achieve fast random bit-streams with a bit rate 4 × 10 = 40 Gbit/s, passing the statisti- cal randomness tests. To optimize the system performance, we also study the dependence of randomness on the main system parameters and on noise.

We demonstrate unidirectional bistability in microdisk lasers electrically pumped and heterogeneously integrated on SOI. The lasers operate in continuous wave regime at room temperature and are single mode. Integrating a passive distributed Bragg reflector (DBR) on the waveguide to which the microdisk is coupled feeds laser emission back into the laser cavity. This introduces an extra unidirectional gain and results in unidirectional emission of the laser, as demonstrated in simulations as well as in experiment.