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In this paper, two-dimensional Graphdiyne and Hexakis-[(trimethylsilyl)ethynyl]benzene nanosheets were prepared using the liquid-phase exfoliation method and were then successfully applied to 1.06 µm passively Q-Switched all-solid-state lasers. The Hexakis-[(trimethylsilyl)ethynyl]benzene was applied for the first time in passively Q-Switched all-solid-state lasers, as we know. For Graphdiyne, the Q-Switched pulse achieved a narrowest pulse width of 415 ns, a maximum repetition frequency of 244.2 kHz, a maximum pulse energy of 133.53 nJ, and peak power of 321.77 mW was obtained. While, the narrowest pulse width, maximum repetition frequency, maximum pulse energy, and peak power for Hexakis-[(trimethylsilyl)ethynyl]benzene are approximately 398.4 ns, 297.1 kHz, 89.61 nJ, and 220.39 mW respectively. The findings demonstrate the promising potential of both candidates as saturable absorbers for signal modulation in solid-state lasers.

We experimentally study the thickness dependence of the terahertz (THz) response in {110}-oriented GaAs crystals for free space electro-optic sampling at 1.55 microm. The THz response bandwidths are analyzed and simulated under phase-matching condition with a model frequency response function. The results indicate that the detection bandwidth increases from 2 THz to 3 THz when the thickness of GaAs is reduced from 2 mm to 1 mm. Below 1 mm, the detected bandwidth is increasingly limited by the emitter characteristics and the finite probe pulse duration. The broadest bandwidth in experiment reaches 3.3 THz when using a 0.2 mm thick crystal, while it exceeds 5 THz in theory. The THz response sensitivity was studied experimentally and modeled taking into account the absorption of the THz radiation in the GaAs crystal. While absorption was found to be negligible for the crystal thickness range studied here, strong saturation is predicted theoretically for crystal thicknesses exceeding 5 mm.