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Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride-on-silicon platform with gallium nitride (GaN) as the main waveguide layer. The photonic circuits consist of a microdisk and a pulley waveguide, terminated by out-coupling gratings. In this Letter, we measure quality factors up to 3500 under continuous-wave excitation. Lasing is observed from 374 to 399 nm under pulsed excitation, achieving low-threshold energies of 0.14 m J / c m 2 per pulse (threshold peak powers of 35 k W / c m 2 ). A large peak-to-background dynamic of around 200 is observed at the out-coupling grating for small gaps of 50 nm between the disk and the waveguide. These devices operate at the limit of what can be achieved with GaN in terms of operation wavelength.

We report on spatially- and time-resolved emission measurements and observation of transport of indirect excitons in ZnO/MgZnO wide single quantum wells.

The spatial distribution of photon modes confined in a 0D cavity and a 1D W1 waveguide is investigated on AlN-based photonic crystal (PC) membranes by spectrally resolved scanning confocal microscopy in the ultra-violet spectral range. The influence of the fabrication-induced disorder of the PC on the photon modes is analyzed. The cavity modes are shown to be robust with respect to disorder, whereas the 1D modes of the W1 waveguide are localized near its cut-off frequency. Those modifications of the lowest energy photonic modes are compared to simulations of weakly disordered photonic structures.

We compare the quality factor values of the whispering gallery modes of microdisks (μ-disks) incorporating GaN quantum dots (QDs) grown on AlN and AlGaN barriers by performing room temperature photoluminescence (PL) spectroscopy. The PL measurements show a large number of high Q factor resonant modes on the whole spectrum, which allows us to identify the different radial mode families and to compare them with simulations. We report a considerable improvement of the Q factor, which reflects the etching quality and the relatively low cavity loss by inserting QDs into the cavity. GaN/AlN QDs-based μ-disks show very high Q values (Q>7000) whereas the Q factor is only up to 2000 in μ-disks embedding QDs grown on the AlGaN barrier layer. We attribute this difference to the lower absorption below bandgap for AlN barrier layers at the energies of our experimental investigation.