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We present the first semiconductor saturable absorber mirror (SESAM) mode-locked praseodymium solid-state laser. The laser is based on a Pr(3+):LiYF(4) crystal as gain medium and a GaInP-quantum well-based SESAM. Self-starting continuous-wave mode-locked laser operation with an average output power of 16 mW is achieved at a center wavelength of 639.5 nm. The laser operates at a repetition rate of ∼85.55 MHz and emits pulses with a duration of ∼18 ps.

A picosecond GaInP/AlGaInP/GaAs vertical external-cavity surface-emitting laser (VECSEL) at 675 nm is reported. The laser is mode-locked with a GaInP/AlGaInP/GaAs saturable absorber mirror and emitted ∼5.1 ps pulses at a 973 MHz repetition rate and an average power of 45 mW. To our knowledge, this is the first demonstration of a passively mode-locked VECSEL emitting fundamental laser radiation at the visible part of the spectrum.

We report on a 2085 nm holmium-doped silica fiber laser passively mode-locked by semiconductor saturable absorber mirror and carbon nanotube absorber. The laser, pumped by a 1.16 μm semiconductor disk laser, produces 890 femtosecond pulses with the average power of 46 mW and the repetition rate of 15.7 MHz.