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In this paper, we report a simulation and investigation of a single In x Ga 1-x N/GaN axial multiple quantum well nanowire (MQWNW) solar cell of radius r = 190 nm and a length of L = 1165 nm. Our results have been shown that 15 In 0.15 Ga 0.85 N (QW) /GaN (barrier) periods is the maximum number that our structure can be supported with an optimal efficiency of about 1.65% achieved with ε = 1.5%. The insertion of MQWs in nanowire permits the growth of In x Ga 1-x N MQWs with high indium concentration of about 50% and ε = 5%. At this indium concentration, the optimal efficiency obtained was 1.70%. Moreover; the structure has been studied with respect to the nanowire radius. In this context, we have shown that the efficiency enhancement achieved through the increase of radius is attributed to the increase of photo-carriers. Study of polarization and proton irradiations has indicated the negative effect of polarization on structure performances and high resistance of III-N semiconductor materials against the radiations, respectively. From these novel structures we can improve solar cell performance for new applications. [ABSTRACT FROM AUTHOR]

The aim of this modeling and simulation is to study the influence of the incorporation of nitrogen (N) and aluminum (Al) on the optoelectronic properties of the structure Al x Ga 1-x As 1-y N y /Ge, and then choose the right combination (N, Al) which gives us a better conversational efficiency of the junction(Al x Ga 1-x As 1-y N y /Ge), in this study, we simulated the effect of N and Al on the strain, the band gap, carrier mobility and structure efficiency where we based on theoretical models experimentally validate, It has been shown that the Al concentration slightly affects the stress and the band gap, but it has a significant influence on the incorporation of nitrogen and in a more homogeneous way introducing a dramatic decrease in the band gap what change considerably the absorption, carrier mobility and final yield of the structure. [ABSTRACT FROM AUTHOR]