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Abstract: Monolithic integration of an organic field-effect transistor (OFET) and an organic electrochromic display cell operating at around 1V is reported. This was achieved by utilising a common patterned layer of poly(styrenesulfonic acid) (PSSH). In the OFET, PSSH served as the electric double layer capacitors between the gate and the organic semiconductor channel. In the electrochromic pixel, PSSH was included as the electrolyte and transports protons from and to the electrochromic layer upon switching. The enhancement mode OFET enables a relatively faster updating speed, of the display cell, and provides a much simpler addressing and updating scheme as compared to smart pixels including a depletion mode electrochemical transistor. [Copyright &y& Elsevier]

Abstract: We report a method for inkjet-printing an organic semiconductor layer on top of the electrolyte insulator layer in polyelectrolyte-gated OFETs by using a surface modification treatment to overcome the underlying wettability problem at this interface. The method includes depositing an amphiphilic diblock copolymer (P3HT-b-PDMAEMA). This material is designed to have one set of blocks that mimics the hydrophobic properties of the semiconductor (poly(3-hexylthiophene) or P3HT), while the other set of blocks include polar components that improve adhesion to the polyelectrolyte insulator. Contact angle measurements, atomic force microscopy, and X-ray photoelectron spectroscopy confirm formation of the desired surface modification film. Successful inkjet printing of a smooth semiconductor layer allows us to manufacture complete transistor structures that exhibit low-voltage operation in the range of 1V. [Copyright &y& Elsevier]