Search

Abstract The influence of blending ratio on resistive switching effect in donor-acceptor type composite of [6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM) and poly(N -vinylcarbazole) (PVK)-based memory devices are investigated. Current-voltage (I - V) curves for the ITO/PCBM + PVK/Al devices with 9 wt.% of PCBM showed a current bistability with a maximum OFF/ON resistance ratio of 9 × 104, which was 100 times larger than that of the device with 23 wt.% of PCBM and was 2000 times larger than that of the device with 41 wt.% of PCBM. Furthermore, the threshold voltage obviously decreased as the PCBM concentration increases. The retention time was above 105 s indicative of the memory stability of the as-fabricated devices. The I - V characteristics at OFF state dominantly comply with the rules of space-charge-limited-current behaviors, and I - V curve at ON state obey Ohmic laws. The proposed device suggests a promising approach for adjustale OFF/ON resistance ratio and threshold voltage in electronic memory devices. Graphical abstract Image Highlights • The influence of blending ratio on resistive switching effect are investigated. • The threshold voltage obviously decreased as the PCBM concentration increases. • The resistance ratio obviously increased with the PCBM concentration decreases. [ABSTRACT FROM AUTHOR]

A novel multilevel resistive switching was observed in epoxy methacrylate resin (EMAR) and carbon nanotubes (CNTs) composite films fabricated by spin coating method. The fabricated devices demonstrated the rewritable nonvolatile memory characteristics. More significantly, the memory device based on EMAR+CNTs composite exhibits multilevel stable conductivity states with stable intermediate resistance states in response to the applied voltage. By setting different compliance current and content of CNTs in composite film, the multilevel ON-states and even the multilevel OFF-states have been observed in our memory device. As fabricated devices exhibited multilevel resistive switching with stable resistance ratio between different resistance states having good data retention and endurance characteristics. It offers a novel design strategy for solution processable multilevel data storage. [ABSTRACT FROM AUTHOR]

Bistable electrical switching and nonvolatile memory devices with the configuration of indium tin oxide (ITO)/active layer/aluminum (Al) are reported. The active layer were prepared from the mixed compositions of 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole, (PBD) and poly( N -vinylcarbazole) (PVK). The as-fabricated ITO/PBD:PVK/Al sandwiched devices exhibited rewriteable flash memory property. Due to the strong interaction between oxadiazole acceptor and carbazole donor, the devices demonstrate excellent performance. The memory devices can operate over a small voltage range, the absolute value of switching-on threshold voltage is less than 1 V and the switching-off threshold voltage is less than 3.5 V. The ON/OFF ratio of current switches in the range of 10 4 –10 2 during the variation of applied voltage and the two different resistance states can be maintained over 4 h. [ABSTRACT FROM AUTHOR]