1. Amphiphilic semiconducting copolymer as compatibility layer for printing polyelectrolyte-gated OFETs
- Author
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Sinno, Hiam, Nguyen, Ha Tran, Hägerström, Anders, Fahlman, Mats, Lindell, Linda, Coulembier, Olivier, Dubois, Philippe, Crispin, Xavier, Engquist, Isak, and Berggren, Magnus
- Subjects
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AMPHIPHILES , *COPOLYMERS , *POLYELECTROLYTES , *ORGANIC field-effect transistors , *INK-jet printing , *ORGANIC semiconductors , *INTERFACES (Physical sciences) - Abstract
Abstract: We report a method for inkjet-printing an organic semiconductor layer on top of the electrolyte insulator layer in polyelectrolyte-gated OFETs by using a surface modification treatment to overcome the underlying wettability problem at this interface. The method includes depositing an amphiphilic diblock copolymer (P3HT-b-PDMAEMA). This material is designed to have one set of blocks that mimics the hydrophobic properties of the semiconductor (poly(3-hexylthiophene) or P3HT), while the other set of blocks include polar components that improve adhesion to the polyelectrolyte insulator. Contact angle measurements, atomic force microscopy, and X-ray photoelectron spectroscopy confirm formation of the desired surface modification film. Successful inkjet printing of a smooth semiconductor layer allows us to manufacture complete transistor structures that exhibit low-voltage operation in the range of 1V. [Copyright &y& Elsevier]
- Published
- 2013
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