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Novel polyurethane containing terphenyl groups were designed and synthesized as gate insulators to induce the crystallization of p-sexiphenyl(p-6P) for organic thin-film transistors (OTFTs). Different sizes and shapes of p-6P grains were measured by atomic force microscopy (AFM), and results showed that the large size of p-6P grain can improve the performance of OTFTs. About 900 nm thick films can be easily fabricated by spin-coating under ambient conditions, followed by curing at UV irradiation for 10 min. OTFTs with this film as gate insulator were found to have good processability, a high charge-carrier mobility of 1.1 cm 2 /V s, a threshold voltage of −25 V, and an on/off current ratio >10 5 . The result indicated that this material is a promising candidate for the exploration of devices using OTFTs. [ABSTRACT FROM AUTHOR]

Here, we copolymerize a monomer containing naphthyl group with 2-hydroxyethyl methacrylate (HEMA) and glycidyl methacrylate (GlyMA) in various molar ratio to obtain copolymers as functional gate dielectric layers of thin-film transistors (TFTs). Using naphthyl-containing molecule to have similar chemical structure with pentance to adjust the grain size of semiconductor. The results indicated that the semiconductor grains size decreased as molar percentage of naphthyl-containing compound in the polymer structure increased, which could also affect the charge carrier mobility of the pentacene thin-film transistors (TFTs). Therefore, this can be a promising manner to fabricate pentacene TFTs with a high charge carrier mobility by using functionalized dielectric layers to obtain uniform grain size of the pentacene semiconductor. Image 1 • Novel polymer insulating materials containing naphthyl group were designed for OTFTs. • The effect of the content of naphthyl group in the polymers on the mobility was studied. • The larger and more uniformed gain size of pentacene was achieved on the designed polymer surface. • A strategy for the design of polymer as gate dielectric was proposed to improve the mobility of OTFTs. [ABSTRACT FROM AUTHOR]

Abstract: A research on the design, synthesis, and characterization of novel cross-linked polymer organic–inorganic hybrid materials as gate insulators for organic thin-film transistors (OTFTs) with vanadyl-phthalocyanine as the organic semiconductor is presented. The hybrid films (0.5–1.2μm thick) can be easily prepared by sol–gel technology and fabricated by spin-coating a mixture of zirconium n-butoxide sol with a side-chain triethoxysilane-capped polyurethane solution in ambient conditions, followed by curing at low temperatures (∼120°C) and cross-linking under UV light. OTFTs with this film as gate insulator were achieved with good processability, high charge-carrier mobility of 0.56cm2/Vs, surface roughness of around 0.49–0.59nm, ultralow threshold of −6V, and ultralow leakage of 0.24mA. Hybrid films with various compositions were investigated, and the results showed that the field-effect mobility of the OTFTs was dominated by the high dielectric constant component ZrO2. The result indicated that these hybrid materials are promising candidates for the exploration of devices using OTFTs. [Copyright &y& Elsevier]