17 results on '"Zhang, Xiao‐Hong"'
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2. Spirobifluorene-appended multi-resonance thermally activated delayed fluorescence emitter for efficient narrowband blue OLEDs with suppressed ACQ effect
3. Efficient and stable single-emitting-layer white organic light-emitting diodes by employing all thermally activated delayed fluorescence emitters
4. Novel D-D′-A structure thermally activated delayed fluorescence emitters realizing over 20% external quantum efficiencies in both evaporation- and solution-processed organic light-emitting diodes
5. Efficient violet non-doped organic light-emitting device based on a pyrene derivative with novel molecular structure
6. Constructing a novel single-layer white organic light-emitting device through a new sky-blue fluorescent bipolar host
7. Efficient and stable single-emitting-layer white organic light-emitting diodes by employing all thermally activated delayed fluorescence emitters
8. Pentacene organic field-effect transistors with polymeric dielectric interfaces: Performance and stability
9. High-performance pentacene field-effect transistors using Al 2O 3 gate dielectrics prepared by atomic layer deposition (ALD)
10. Highly efficient ternary polymer-based solution-processable exciplex with over 20% external quantum efficiency in organic light-emitting diode
11. Green solution-processed thermally activated delayed fluorescence OLEDs with improved performance by using interfacial exciplex host
12. Efficient solution-processed red organic light-emitting diode based on an electron-donating building block of pyrrolo[3,2-b]pyrrole
13. Novel star-shaped yellow thermally activated delayed fluorescence emitter realizing over 10% external quantum efficiency at high luminance of 30000 cd m−2 in OLED
14. Highly efficient thermally activated delayed fluorescence emitters based on novel Indolo[2,3-b]acridine electron-donor
15. Efficient, color-stable and high color-rendering-index white organic light-emitting diodes employing full thermally activated delayed fluorescence system
16. High-performance pentacene field-effect transistors using Al2O3 gate dielectrics prepared by atomic layer deposition (ALD)
17. High-performance pentacene field-effect transistors using Al2O3 gate dielectrics prepared by atomic layer deposition (ALD)
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