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Bi 3+ , P O 4 3 − and B O 3 3 − doped Sc 0.73 Y 0.2 VO 4 : Eu 0 . 07 3 + phosphors were synthesized by solid state reaction at 1200 °C. The structure, morphology and luminescence properties were investigated. The synthesized phosphors show narrow particle distribution with average size around 2 μm. Under 365 nm excitation, integrate emission intensity increases after doping with Bi 3+ , P O 4 3 − and BO 3 3 − . The optimal doping concentrations are 1%, 20%, 10% for Bi 3+ , P O 4 3 − and BO 3 3 − , respectively. The thermal stability is greatly improved, especially for BO 3 3 − doped sample, whose intensity is about 92% of its original intensity even at 200 °C. [ABSTRACT FROM AUTHOR]

La 3 Si 6 N 11 :Ce3+ (LSN:Ce3+) phosphor has attracted widespread attention in the field of high-power white light-emitting diodes as it can be effectively excited by blue LED chip and exhibits excellent thermal quenching. To improve the emission intensity is always the critical objective of La 3 Si 6 N 11 :Ce3+. In this paper, the strategy by combining CeO 2 and CeN as cerium sources of the activator was developed to enhance the emission intensity. The emission intensity of NO-LSN:Ce3+ is 112.8% of that of N-LSN:Ce3+, which benefits from the enhancement of the concentration of Ce3+ ions. Generally, more Ce4+ ions can enter into the lattice of La 3 Si 6 N 11 at high concentration due to the smaller ionic radius of Ce4+ than Ce3+. After that, Ce4+ ions can be effectively reduced to Ce3+ ions at high temperature. The luminescence improvement mechanism of as-prepared phosphors was analyzed. This research provides an effective method for improving the emission intensity of nitride or oxy-nitride phosphors. • The effects of CeO2 and CeN co-doping on emission intensity of LSN phosphor was first studied. • The mechanism of CeO2 and CeN co-doping LSN on emission intensity was analyzed. • This study provides a strategy for improving the emission intensity of LSN:Ce3+. [ABSTRACT FROM AUTHOR]