1. Electrical impedance spectroscopy characterization of ZnTe thin film deposited by R-F sputtering.
- Author
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Chaik, M., Ben Moumen, S., Agdad, A., SambaVall, C.M., El Aakib, H., AitDads, H., Outzourhit, A., and Essaleh, L.
- Subjects
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ELECTRIC impedance , *THIN films , *IMPEDANCE spectroscopy , *ELECTRICAL impedance tomography , *OPTICAL diffraction , *BAND gaps , *ELECTRIC conductivity - Abstract
In this study, ZnTe thin films were prepared using the R-F sputtering technique. X-ray diffractogramme indicates that our samples are crystallized in a cubic phase with a F-43 m space group. The UV visible spectrophotometer confirms the surface homogeneity of the deposited films and also the similitude of the value of the optical band gap energy with those reported in the literature. Electrical impedance spectroscopy data were analyzed to estimate the activation and relaxation energies. The AC electrical conductivity data are discussed in the light of existing theoretical models. • ZnTe thin film were prepared by RF- sputtering on glass substrates. • The film was characterized by UV–Visible spectrophotometer, and X-Ray diffraction for the optical and structural properties. • The electrical properties were investigated by impedance spectroscopy. [ABSTRACT FROM AUTHOR]
- Published
- 2019
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