1. X-ray scattering studies on InGaAs quantum dots
- Author
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Hsu, C.-H., Lee, H.-Y., Hsieh, Y.-W., Stetsko, Y.P., Tang, M.-T., Liang, K.S., Yeh, N.T., Chyi, J.-I., and Noh, D.Y.
- Subjects
- *
QUANTUM dots , *X-ray scattering - Abstract
We present a structural investigation of self-assembled InGaAs quantum dots on GaAs(0 0 1) substrates grown by molecular-beam epitaxy. The grazing incidence X-ray scattering measurements were performed at BL17B of Taiwan Light Source and BL12B2 of SPring-8. The strain field, composition distribution, and shape of the dots are determined. We found that In concentration was less than the nominal composition, 50% near the dot/substrate interface and exceeded 50% near the top of the dots, indicating In surface segregation. In addition, the relation between the strain and the composition did not obey Vegard’s law. [Copyright &y& Elsevier]
- Published
- 2003
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