1. Control of 3C-SiC/Si wafer bending by the 'checker-board' carbonization method
- Author
-
Fillip Soares, Caroline Le Blanc, Yves Monteil, Gabriel Ferro, Sandrine Juillaguet, Hugues Mank, H. Haas, Jean Camassel, André Leycuras, Carole Balloud, Philippe Arcade, Thierry Chassagne, Hervé Peyre, NOVASiC, Laboratoire des Multimatériaux et Interfaces (LMI), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Groupe d'étude des semiconducteurs (GES), and Centre National de la Recherche Scientifique (CNRS)-Université Montpellier 2 - Sciences et Techniques (UM2)
- Subjects
Compressive stress ,Materials science ,Bending ,Inorganic compounds ,Polishing ,02 engineering and technology ,01 natural sciences ,Thermal expansion ,Stress (mechanics) ,symbols.namesake ,Optics ,Thermal expansion coefficient ,0103 physical sciences ,Ultimate tensile strength ,Materials Chemistry ,Wafer ,Electrical and Electronic Engineering ,Composite material ,Photoluminescence ,Tensile stress ,ComputingMilieux_MISCELLANEOUS ,010302 applied physics ,business.industry ,Carbonization ,Silicon carbides ,Infrared spectra ,Surfaces and Interfaces ,Bond order wave ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Lattice parameters ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Compressive strength ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,symbols ,Defects ,Raman spectra ,0210 nano-technology ,business ,Raman spectroscopy ,Epitaxy - Abstract
Due to the large difference in lattice parameters and thermal expansion coefficients, the hetero-epitaxial growth of 3C-SiC on Si mainly results in highly defective layers on strongly bent wafers. The defects may not be detrimental for very basic applications, but the bow is. In order to solve this problem, we have developed a technique called checker-board carbonization which, basically, balances a compressive (interfacial) stress by a tensile one. In this way, the overall bending is effectively reduced. In this work, we will report on the effect of polishing the thick, as-grown, 3C-SiC layers deposited on top and results from, both, infrared and Raman spectroscopy collected on 35 mm diameter wafers will be presented. From DDX and low temperature photoluminescence measurements, we will show that a similar 3C-SiC quality can be achieved on, both, parts of the initially compressive and tensile re-grown layers.
- Published
- 2005
- Full Text
- View/download PDF