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Van der Waals heterostructures of (TMDL = 1/BNL = 1–4/TMDL = 1/BNL = 1–4), [TMD = MoS2, WS2, and ReS2] are grown on c‐plane sapphire substrate by pulsed laser deposition (PLD) under slow kinetic condition. The heterostructure systems show strong emission around 2.3 eV and subsidiary peaks around 2.8, 1.9, 1.7, and 1.5 eV. BN and transition metal dichalcogenides (TMDs) form type‐I heterojunction and the emission peaks observed are explained in terms of various band to band recombination processes and considering relative orientation of Brillouin zones. The emission peak around 2.3 eV is promising for solar and photovoltaic applications. The observation is almost similar for three different heterostructure systems. [ABSTRACT FROM AUTHOR]

We report on the observation of stable p-type conductivity in B and N co-doped epitaxial ZnO thin films grown by pulsed laser deposition. Films grown at higher oxygen partial pressure (∼10−1 Torr) shows p-type conductivity with a carrier concentration of ∼3 × 1016 cm−3. This p-type conductivity is associated with the significant decrease in defect emission peaks due to the vacancy oxygen (VO) and Schottky type-I native defects compared to films grown at low oxygen partial pressure (∼10−5 Torr). The p-type conductivity is explained with the help of density functional theory (DFT) calculation considering off-stoichiometric BN1 + x in the ZnO lattice. [ABSTRACT FROM AUTHOR]