1. Degradation of transient OFF-state leakage current in AlGaN/GaN HEMTs induced by ON-state gate overdrive.
- Author
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Li, Baikui, Jiang, Qimeng, Liu, Shenghou, Liu, Cheng, and Chen, Kevin J.
- Subjects
SEMICONDUCTOR research ,SOLID state electronics ,MODULATION-doped field-effect transistors ,ALUMINUM gallium nitride ,GALLIUM nitride - Abstract
The degradation of transient OFF-state leakage current in AlGaN/GaN HEMTs induced by ON-state gate overdrive was observed and studied. The OFF-state leakage current increases significantly with a pre- ON-state gate overdrive. It takes more than 30 s for the leakage current decay to its equilibrium level in dark. The decay processes follow a stretched-exponential law. We propose that this degradation corresponds to the persistent photoconductivity of GaN buffer induced by the electroluminescence during the Schottky gate overdrive. Both the ON-state gate overdrive bias and duration dependences of the OFF-states leakage degradation were studied. This work indicates that gate-protection is necessary to preserve low OFF-state leakage current and improve device reliability. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]
- Published
- 2014
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