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In this work, the Schottky-on-heterojunction light-emitting diodes (SoH-LED) are monolithically integrated with the AlGaN/GaN high-electron-mobility transistors (HEMT) on an AlGaN/GaN-on-Si platform commonly used for GaN lateral electronic devices. The on-chip electro-optic modulation is realized in a single device fabricated using HEMT-compatible process. Also, SoH-LED arrays are fabricated to demonstrate the on-chip addressable functionality with each SoH-LED pixel in the array individually controlled by the integrated HEMT. High-resolution micro-scale SoH-LED seven-segment displays are demonstrated to show the potential of using SoH-LEDs as a robust alternative for micro flat-panel displays. [ABSTRACT FROM AUTHOR]

The GaN-to-Si vertical conduction mechanisms on a low resistivity p-type (111) Si substrate under high-voltage operation are investigated using the temperature-dependent high-voltage C-V characterization and device simulation. It is found the deep depletion and weak inversion in Si will result in a high electric field at the GaN/Si interface and induce the impact ionization of Si. The generated electrons will be injected into GaN buffer layer, fill in buffer traps and act as free carriers in GaN, eventually leading to considerable vertical leakage in the AlGaN/GaN-on-Si structures. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]