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Dear participants of EuroCVD20, with pleasure we address you some words about the present conference proceedings of EuroCVD20. We faced a big challenge organizing a conference to which the full paper peer reviewed contributions will be available already with the launch of the conference! Clearly, the advantage of this procedure is the highest quality of the conference proceedings, namely peer reviewed scientific publications. Already before listening to the presentation or discussing the poster with the author, the participant of the conference will get exposed to the scientific topic, which makes him/her able to better understand the background. This opportunity opens the doors for scientific exchange with the author at its best. The educational aspects of top notch scientific discussions are based on understanding of the topics and competence in communicating the questions and answers. As time slots for oral or poster presentations at conferences are very limited the message transfer has to be well prepared between the peers, i.e. the author of the contribution and the reader of the manuscript. We are aware that some aspects speak against this procedure. The most important argument is that the latest results will not be reported in the paper. We, however, trust that none of the conference participants will be unhappy seeing latest results of a research work in the conference presentation only. Moreover, a scientifically founded discussion might even trigger optimization of the latest results and publication in a follow-up communication. Therefore we are happy to put at disposition to all participants of the EuroCVD20 conference 49 peer reviewed full papers that have been published either in pss(a) or pss(c). We, the co-editors of the EuroCVD20 conference proceedings, wish all readers of the collected papers insight, understanding, fun and pride. (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

Information about several papers discussed at the Symposium BB held on May 2-6, 2016 in Lille, France, is presented. Topics discussed include effects of grain boundaries and interfaces on the diffusion and transport processes in nanomaterials, electronic structure of defects in nanostructures and evolution and properties of radiation defects in nanosize materials an heterostructures.

Information about several papers discussed at the Symposium K "Group IV Semiconductors Materials Research: Growth, Characterization and Applications to Electronics and Spintronics" held on May 2-6, 2016 in Lille, France, is presented. Topics discussed include nanostructured materials, thin and thick films and electronic and photovoltaic applications. The symposium featured notable speakers including Gudrun Kissinger, Sergio Pizzini and Leo Miglio.

This issue contains a collection of papers presented at the 11th International Conference on Excitonic and Photonic Processes in Condensed Matter and Nano Materials (EXCON'15) which was held in Montreal, Canada on 18-22 May 2015. Prof. Jai Singh initiated this conference series in 1994. The venue has wandered around the world, appropriately starting in Darwin (Australia). We were delighted to see the momentum prevailing for the 11th time in Canada, where there is vigorous activity in condensed-matter physics, nanoscience, and photonics. The EXCON series of conferences focuses on multidisciplinary activities related to exciton physics, providing a forum for research communication amongst condensed-matter physicists, physical chemists, biophysicists, and materials scientists. EXCON'15 hosted exciting discussions within the following topics: - Molecular crystals, aggregates, and polymers - Inorganic materials, organic/inorganic hybrids - Quantum wells, wires, and dots - Biological systems - Opto-electronic devices; light-emitting diodes and solar cells - Nonlinear phenomena, biexcitons, and multi-excitons - Exciton-exciton interactions and Bose-Einstein condensation - Ultrafast dynamics of excitons; relaxation, energy transport, charge transfer - Strong exciton-light interaction; polaritons - Strong exciton-lattice interactions; photo-induced phase transitions - New experimental techniques applied to studies of excitons - New theoretical and computational techniques applied to excitonic systems To underline the international nature of research on excitonic processes and to reflect the diversity of this community, the conference venue has rotated between Australia, Europe, North America, and Japan. EXCON conferences have been held in Darwin (Australia, 1994), Kurort Gohrisch (Germany, 1996), Boston (USA, 1998), Osaka (Japan, 2000), Darwin again (2002), Cracow (Poland, 2004), Winston-Salem (USA, 2006), Kyoto (Japan, 2008), Groningen (Netherlands, 2012). The 2015 edition was held in the campus of Polytechnique Montréal. The logo of the conference incorporates an iconic symbol of Montreal - the Olympic stadium, whose dome is a valence band associated with an excitonic system. The EXCON'15 conference was attended by 110 participants including 16 Invited Speakers, amongst whom 7 were female. In 2015, EXCON had a particularly privileged role in joining the world in celebrating the International Year of Light, with special invited speakers as an addition to the pool of the regular program. It is a pleasure to announce that the next conference of the EXCON series will be held in 2018 in Japan, which hosts key players in fields associated with excitonic processes in condensed matter. We believe that we represent the community when we express that we are looking very much forward to the 2018 meeting. (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

This proceedings volume of physica status solidi contains papers presented at the 17th International Conference on Extended Defects in Semiconductors (EDS 2014). They have been selected during a peer-review process. The conference was organized by the Georg-August-University Göttingen and was held at the Physics Faculty as part of the university's North Campus in Göttingen from September 14 to 19, 2014. The biennial conference series on Extended Defects in Semiconductors started with a meeting in Hünfeld, Germany, in 1978. Subsequent meetings took place in France, Great Britain, Germany, Italy, Poland, Russia and the preceding EDS 2012 in Thessaloniki (Greece). EDS 2014 was a conference following the tradition of previous conferences of this series, i.e. it brought together experts in fundamental and applied research on structural defects in current and future semiconducting material systems, their nanostructures and devices. For the first time, carbon-related materials had been included. It provided a forum for excellent presentations and lively discussions in a stimulating scientific atmosphere. Topics of the conference included - Thin films and heterostructures - Low-dimensional systems and related defects: semiconductor nanocrystals, quantum wells, quantum dots, nanowires - Extended defects in C-related materials (incl. graphen) - Interface structures and defect interaction - Doping-, irradiation-, and implantation-induced defects - Electronic structure of defects - Defect engineering, strain engineering - Mechanical properties and dislocation dynamics - Role of defects in optoelectronic and magnetic properties - Degradation mechanisms in semiconductor devices - Atomistic and multiscale simulations, modeling approaches of defects, interfaces and nanostructures - Advanced characterisation techniques and methods for the investigation of semiconductor materials, in-situ imaging and analysis - Interaction of point and extended defects, point defect agglomeration - Materials for solar energy conversion and energy storage. The organizers want to express their gratitude to all members of the EDS Scientific Committee as well as to the members of the EDS 2014 Program Committee and all referees for their invaluable work. Support by the Georg-August-University and the CRC1073 is also gratefully acknowledged. Last but not least, we thank all participants of EDS 2014 whose excellent contributions built the base for a fruitful and stimulating conference. (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

'Crystals are like people, it is the defects in them which tend to make them interesting!' said Cambridge Professor Sir Colin Humphrey once upon a time. Today, this statement still rings true. Defects govern the properties of nanostructures to the same or even to a greater extent as they do in bulk solids. Any surface or interface is already a perturbation of an ideal solid, and the role of interfaces increases with decreasing dimensionality of objects. However, the research field of defects in nanostructures extends much farther, encompassing doping, diffusion, radiation effects, phase transitions - virtually all fields of solid-state science and technology. A burst of research activity in two-dimensional materials has been brought about by the isolation of graphene from bulk graphite in 2004 by Geim and Novoselov (Nobel prize in Physics 2010). The invention of efficient blue light-emitting diodes crowned with the very recent Nobel prize in Physics awarded to Isamu Akasaki, Hiroshi Amano and Shuji Nakamura goes hand-in-hand with the defect engineering in semiconductors. The first EMRS symposium on defects in nanomaterials was held during the 2012 Fall meeting in Warsaw, and the success of the event was a motivation to organize a follow-up symposium during the 2014 Spring Meeting in Lille. The Symposium E entitled 'Defect-induced effects in nanomaterials' attracted even more participants from all over the world, and this volume includes 36 papers based on presentations from the five days of oral and poster sessions, from May 26 to 30. The program of the symposium comprised 15 invited and 47 oral talks, as well as 98 poster presentations. The presenters came from 44 countries located on five continents: Africa, North and South America, Asia, Australia, and Europe. The following topics have been covered: - Swift heavy ion irradiation as the means to tailor nanomaterials; - Effects of grain boundaries and interfaces on diffusion and transport processes in nanomaterials; - Electronic structure of defects in nanostructures; consequences for carrier transport, magnetism, optical and electronic properties, as well as device parameters; - Creation, evolution and properties of radiation defects in nanosize materials and heterostructures; the role of interfaces, nonstoichiometry, strain and adjacent layers; - Defects in two-dimensional materials; - Use of defects as microprobes; - Multiscale computer modeling of defect creation in nanomaterials; - Novel technological processes of micro-, nano- and optoelectronics using defects and radiation effects in nanostructures. The latest achievements in theory and experiment as well as technological applications have been presented and discussed by academic and industrial researchers. We are deeply grateful to all participants who, through their valuable contributions, friendly and open discussions, turned the symposium into an exciting event. We also greatly acknowledge the financial and administrative support of the E-MRS Headquarters which allowed the organization of the symposium. Last but not least, our thank goes to Wiley-VCH that took over the publication of the symposium proceedings. (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

Information about several papers discussed at the 2016 Spring European Materials Research Society Meeting held in Lille, France is presented. Topics discussed include the synthesis, characterization and processing of advanced materials in optoelectronic and magnetic devices. It notes the importance of research to improve the fundamental understanding of the development of materials solutions ith a reduced or completely eliminated critical content.

This volume is a collection of papers presented at Symposium X 'Materials Research for Group IV Semiconductors: Growth, Characterization, and Technological Developments' at the E-MRS Spring Meeting 2014 held from May 26-30 in Lille, France. Different from the recent past, the major challenges for fundamental research and technological development in microelectronics and photovoltaics are no more confined to bulk silicon and silicon devices but to a variety of options based on silicon alloys, nanocrystalline silicon, silicon nanowires, Ge films on silicon, and graphene. Group IV elements are dominating microelectronics, photovoltaics, and nano-technology in their whole variety and with ongoing innovation potential. The overall development is driven more and more by defect engineering procedures, optimized deposition processes and growth techniques, advanced diagnostics and modeling tools. Basic research on point defects and extended defects remains in the center of interest for both electronic and photovoltaic applications, being still important for solving defect related problems, for improved defect engineering, and to increase the efficiency of gettering processes in photovoltaic and electronic materials. Crystal growth for electronic applications moves towards 450 mm diameter silicon ingots while photovoltaic applications are seeking a tradeoff between high quality of large volumes and cost efficiency. Advanced float-zone processes open new opportunities, and modeling of crystal growth and defect generation for Si, Ge and Si-Ge alloys can help to facilitate these developments. Optimization of epitaxial deposition of nitrides on silicon substrates as well as novel methods for the growth of graphene on silicon are in the center of interest because of their innovation potential for the optoelectronic and microelectronic industry. Selective epitaxy for advanced electronic applications and strain engineering in strained layer epitaxy are still important for the heterogeneous integration of Si or Ge in high-end silicon device technologies. Eventually, nanocrystalline group IV semiconductors in their whole variety from quantum dots, nanowires and superlattices offer a number of novel opportunities for new applications in view of 'more than Moore'. The symposium addressed its interest to all these topics and provided a successful forum for scientists coming from research institutions and industry of Asia, America, Australia, Africa, and Europe to discuss recent results and developments in materials research on group IV elements. In total, 72 oral and 113 poster presentations have made this symposium a fruitful expert meeting, with mutual benefits arising from technical and scientific interactions between academy and industry. (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]