1. Selective area growth of GaN on r-plane sapphire by MOCVD.
- Author
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Rozhavskaya, Mariya M., Lundin, Wsevolod V., Nikolaev, Andrey E., Zavarin, Evgeniy E., Troshkov, Sergey I., Brunkov, Pavel N., and Tsatsulnikov, Andrey F.
- Abstract
In this study we investigate the possibility of a-GaN ELOG process and its peculiarities for stripes of various orientations. It is shown that stripe orientation allows governing such important parameters of ELOG-process as lateral growth rate, voids high, fast growth direction. The intermediate orientations of stripe windows (differ from conventional (0001) and (1-100)) can be effectively used for double-cross ELOG process. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]
- Published
- 2013
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