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Semipolar III-nitrides have attracted increasing attention because of the reduced piezoelectric field in the active layer. In particular, (11-22) plane is promising due to the small polarization field along the growth axis and the epitaxial matching on m-plane sapphire. The aim of this study was to assess the effect of growth conditions on the structural and electrical properties of Si-doped (11-22) AlGaN. Semipolar AlGaN/AlN layers were grown on m-plane sapphire by metal-organic chemical vapor deposition at different temperatures, V/III ratios, and tetraethylesilane flows. Surface morphology, crystalline quality, and electrical properties of the AlGaN layers were investigated with AFM, XRD, and by Hall measurements, respectively. [ABSTRACT FROM AUTHOR]

We demonstrated high-efficiency deep-ultraviolet light-emitting diodes (DUV-LEDs) by improving light-extraction efficiency (LEE) by using a transparent p-AlGaN contact layer and a highly-reflective p-type electrode. We fabricated DUV-LEDs with emission wavelengths between 265-288 nm using p-AlGaN contact layers with compositional wavelength at around 275 nm. The reflectivity of p-type electrode was increased to be approximately 70% by introducing Ni(1nm)/Al layers. The external quantum efficiency (EQE) of the 287 nm LED was increased from 2% to 5.5% by replacing conventional p-GaN contact layer by transparent p-AlGaN contact layer. The increase of LEE was estimated to be by approximately more than 1.7 times. The use of transparent p-AlGaN contact layer is considered to be basic and quite important technique in order to obtain high LEE in DUV LEDs. The EQE of DUV-LED would be much increased by optimizing the device structure and by combining with other approaches to improve LEE. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]