21 results on '"Honda, Yoshio"'
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2. Achieving high-growth-rate in GaN homoepitaxy using high-density nitrogen radical source
3. HVPE growth of a -plane GaN on a GaN template (110)Si substrate
4. DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate
5. Series resistance in a GaN/AlGaN/n-Si structure grown by MOVPE
6. Time-resolved photoluminescence spectroscopy in a GaN/AlGaN SQW structure grown on a (111) Si substrate
7. Optical spectra of (1-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate
8. Optical spectra of GaN/InGaN/GaN MQW structure grown on a (1–101) GaN facet
9. The surface diffusion of Ga on an AlGaN/GaN facet structure in the MOVPE growth
10. Recombination dynamics and internal quantum efficiency in InGaN.
11. X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy.
12. Enhancement of light output power on GaN-based light-emitting diodes using two-direction stripe-patterned sapphire substrate.
13. Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy.
14. In-situ void formation technique using an AlN shell structure grown on GaN stripes on Si(111) and c-plane sapphire substrates.
15. Growth of InGaN nanowires on a (111)Si substrate by RF-MBE.
16. The surface diffusion of Ga species on an AlGaN facet structure in low pressure MOVPE.
17. Subband structure and transport properties of two-dimensional electron gas in AlxGa1-xN/GaN heterostructures.
18. Selective MOVPE growth of InGaN/GaN MQW on microfacet GaN stripes.
19. Drain bias stress and memory effects in AlGaN/GaN heterostructure field-effect transistors with p-GaN gate.
20. Optical properties of (1-101) InGaN/GaN MQW stripe laser structure on Si substrate.
21. Time-resolved spectroscopy in an undoped GaN (1-101).
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