19 results on '"Nanishi, Y"'
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2. Photoreflectance spectroscopy of the band bending and the energy gap for Mg-doped InN layers
3. Gate leakage currents of AlGaN/GaN HEMT structures grown by metalorganic vapour phase epitaxy
4. Fabrication of InN/InGaN multiple quantum well structures by RF-MBE
5. Growth of polycrystalline InN on silica glass by ECR-MBE
6. Correlation among growth conditions, crystal structures and optical properties of InN
7. Local structure of rare-earth-doped diluted magnetic semiconductor GaGdN
8. Surface treatment of GaN and InN using (NH 4 ) 2 Sx
9. TEM characterization of InN films grown by RF‐MBE
10. Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by Infrared Spectroscopic Ellipsometry
11. Effect of Nitridation on Crystallinity of Polycrystalline GaN Grown on Silica Glass by ECR‐MBE
12. Influence of Growth Condition on Superconducting Characteristics of InN on Sapphire (0001)
13. Growth of A-plane (11-20) In-rich InGaN on R-plane (10-12) sapphire by RF-MBE.
14. Effects of non-stoichiometry and compensation on fundamental parameters of heavily-doped InN.
15. Microstructure of A-plane InN grown on R-plane sapphire by ECR-MBE.
16. Growth of hexagonal GaN films on the nitridated β-Ga2O3 substrates using RF-MBE.
17. Surface treatment of GaN and InN using (NH4)2S x.
18. Effect of Nitridation on Crystallinity of Polycrystalline GaN Grown on Silica Glass by ECR-MBE.
19. Influence of Growth Condition on Superconducting Characteristics of InN on Sapphire (0001).
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